The development of p-type metal oxide materials is of great importance and is seen as an enabling factor in next-generation electronic devices. Consequently, the formulation of reliable techniques for the deposition of these materials is of significant interest, though precursor chemistry towards these materials is sparse. This investigation aimed to develop novel chemical precursors for the atomic layer deposition of p-type tin(II) oxide, and describes a number of related studies and perspectives on the chemistry involved.
|Date of Award||13 Feb 2019|
|Supervisor||Paul Raithby (Supervisor) & Andrew Johnson (Supervisor)|