Zirconium Diselenide, a moderate band gap and air sensitive group IVB semi conducting transitional metal dichalcogenide, was investigated as a channel ma terial for ionic liquid gated field effect transistors. Thin flakes of ZrSe2 were mechanically exfoliated and transfered to Si/ SiO2 substrates via visco-elastic aided deterministic transfer. Contacts were patterned with lithography, and de posited via electron beam evaporation. Assembled devices were measured for transfer characteristics. A total of 23 devices were fully fabricated and used to take measurements. No devices showed a "turning-on" through resistance measurements, and temperature sweeps displayed noisy high resistance signals. Atomic Force Microscopy and Raman Spectrocopy were used to investigate the oxidation of ZrSe2 flakes, gaining insight into the oxidation mechanism of the material. Future fabrication strategies and investigations on ZrSe2 were out lined.
Investigating the electronic properties of group IVB TMDs as ionic liquid gated FETs
Meads, E. (Author). 25 Mar 2026
Student thesis: Masters Thesis › MPhil