Abstract
Responding to the demand for smaller, smarter and more powerful electronic devices, this research investigates single-source precursors for aerosol-assisted chemical vapour deposition of metal chalcogenide thin films. It focusses on two hitherto under-researched precursor frameworks, aiming to identify superior designs capable of low temperature deposition. Candidate precursors were used to deposit thin films, many at temperatures lower than 250 °C, demonstrating their exciting potential for use in semiconductor manufacturing processes.Chapter 1: An overview of topics to be discussed in the thesis are introduced, including the science of semiconductors. In subsequent discussion of thin film fabrication methods, aerosol assisted chemical vapour deposition is highlighted as a means to formulate metal chalcogenide thin films. Given the importance of precursor design to such deposition, a review of the relevant literature is provided.
Chapter 2: The rationale and aim of the research are identified, followed by a brief outline of the methods deployed.
Chapter 3: A series of metal thioamidate precursors to sulfur-based photovoltaic buffer layers were designed, synthesised and characterised. One of these was used to deposit ZnS films at temperatures as low as 200 °C.
Chapter 4: Attempts were made to deploy the most promising thioamidate ligand design for deposition of other metal sulfides. Variations of this design were found to be promising candidates, demonstrating the versatility of such precursors towards metal sulfide films at temperatures lower that those previously reported.
Chapter 5: Three tin(II) selenophosphinamides were synthesised and their thermal properties examined to determine their viability for deposition of tin(II) selenide. SnSe films were grown using aerosol assisted chemical vapour deposition. These were used to inform the design of other main group metal selenide precursors, which exhibited promising thermal properties.
Chapter 6: A tellurophosphinamide ligand was analysed as a framework for the formation of various main group metal tellurides. A homoleptic tin(II) tellurophosphinamide amide was used successfully to deposit SnTe at unprecedentedly low temperatures.
Chapter 7: Potentially fruitful opportunities for further research were identified.
| Date of Award | 11 Sept 2024 |
|---|---|
| Original language | English |
| Awarding Institution |
|
| Supervisor | Andrew Johnson (Supervisor) & Adam Squires (Supervisor) |
Keywords
- alternative format
Cite this
- Standard