Abstract
The electronic structure of the p-type transparent conducting oxide CuCrO(2) has been studied by x-ray photoemission, x-ray absorption, and x-ray emission spectroscopies. The upper part of the valence band derives mainly from Cu 3d and Cr 3d states while the lower valence-band states are of dominant O 2p atomic character, but with pronounced mutual hybridization among Cu 3d, Cr 3d, and O 2p states. Site specific electronic excitations have been studied by resonant inelastic x-ray scattering at the Cu L and Cr L edges. Inelastic loss at the Cu L edge is dominated by on-site interband excitations similar to those found in Cu(2)O, while at the Cr L edge localized excitations arising from ligand field splitting of the Cr 3d levels are observed. Mg doping on the Cr sites in CuCrO(2) is shown to lead to a pronounced shift in the Fermi level toward the edge of the valence band. The experimental data are compared to electronic structure calculations on CuCrO(2) carried out using density-functional methods corrected for onsite Coulomb repulsion.
Original language | English |
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Article number | 075102 |
Journal | Physical Review B |
Volume | 79 |
Issue number | 7 |
DOIs | |
Publication status | Published - 2009 |
Keywords
- magnesium
- valence bands
- density functional theory
- delafossite structure
- synchrotron-radiation
- electrical-conduction
- semiconductor doping
- crystal-structure
- Fermi level
- X-ray emission spectra
- transparent oxides
- thin-films
- semiconductor materials
- X-ray
- pulsed-laser deposition
- copper compounds
- absorption spectra
- X-ray photoelectron spectra
- cr2o3
- photoemission
- optoelectronic properties