Wideband Gap Semiconductors and New Trends in Power Electronics

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Abstract

With the rapid development and take-up of modern wide band gap devices using Silicon Carbide (SiC) or Gallium Nitride (GaN) in particular, the landscape has changed for Power Electronics as a result. These devices can switch higher voltage and currents, faster, than previous Silicon based technologies, and can also tolerate much wider temperature ranges. These advantages make these new devices extremely attractive for Power Electronics applications, especially in an extreme environment such as Aerospace or Automotive. This presentation will provide a current view of the state of the art of wide band gap devices, and also how they are affecting developments in power electronics systems as a result.
Original languageEnglish
Title of host publicationSaber Seminar for Automotive and Aerospace Systems
Publication statusPublished - Oct 2015

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Power electronics
Semiconductor materials
Energy gap
Gallium nitride
Silicon carbide
Switches
Silicon
Electric potential
Temperature

Cite this

Wilson, P. (2015). Wideband Gap Semiconductors and New Trends in Power Electronics. In Saber Seminar for Automotive and Aerospace Systems

Wideband Gap Semiconductors and New Trends in Power Electronics. / Wilson, Peter.

Saber Seminar for Automotive and Aerospace Systems. 2015.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Wilson, P 2015, Wideband Gap Semiconductors and New Trends in Power Electronics. in Saber Seminar for Automotive and Aerospace Systems.
Wilson P. Wideband Gap Semiconductors and New Trends in Power Electronics. In Saber Seminar for Automotive and Aerospace Systems. 2015
Wilson, Peter. / Wideband Gap Semiconductors and New Trends in Power Electronics. Saber Seminar for Automotive and Aerospace Systems. 2015.
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