WC3.1-Dynamics of Quantum Dot Lasers on Silicon (Invited)

Constanze Hantschmann; Peter Vasil'Ev; Siming Chen; Mengya Liao; Alwyn Seeds; Huiyun Liu; Richard Penty; Ian White

doi:10.1109/PHOSST.2019.8795052

WC3.1-Dynamics of Quantum Dot Lasers on Silicon (Invited)

Constanze Hantschmann, Peter Vasil'Ev, Siming Chen, Mengya Liao, Alwyn Seeds, Huiyun Liu, Richard Penty, Ian White

Vice Chancellor's Office

Research output: Chapter or section in a book/report/conference proceeding › Chapter in a published conference proceeding

Abstract

InAs/GaAs quantum dot lasers epitaxially grown on silicon substrates are promising candidates as light sources for silicon photonic integrated circuits. We discuss their dynamic properties via small-signal and pulsed simulation and experiment, with a special focus on their potential for data transmission applications.

Original language	English
Title of host publication	IEEE Photonics Society Summer Topical Meeting Series 2019, SUM 2019
Publisher	IEEE
ISBN (Electronic)	9781728105970
DOIs	https://doi.org/10.1109/PHOSST.2019.8795052
Publication status	Published - 1 Jul 2019
Event	2019 IEEE Photonics Society Summer Topical Meeting Series, SUM 2019 - Fort Lauderdale, USA United States Duration: 8 Jul 2019 → 10 Jul 2019

Publication series

Name	IEEE Photonics Society Summer Topical Meeting Series 2019, SUM 2019

Conference

Conference	2019 IEEE Photonics Society Summer Topical Meeting Series, SUM 2019
Country/Territory	USA United States
City	Fort Lauderdale
Period	8/07/19 → 10/07/19

Keywords

Modulation
Optical pulses
Quantum dot lasers
semiconductor device modeling
silicon photonics

ASJC Scopus subject areas

Computer Networks and Communications
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Instrumentation
Atomic and Molecular Physics, and Optics

Access to Document

10.1109/PHOSST.2019.8795052

Cite this

WC3.1-Dynamics of Quantum Dot Lasers on Silicon (Invited). / Hantschmann, Constanze; Vasil'Ev, Peter; Chen, Siming et al.
IEEE Photonics Society Summer Topical Meeting Series 2019, SUM 2019. IEEE, 2019. 8795052 (IEEE Photonics Society Summer Topical Meeting Series 2019, SUM 2019).

Research output: Chapter or section in a book/report/conference proceeding › Chapter in a published conference proceeding

Hantschmann, C, Vasil'Ev, P, Chen, S, Liao, M, Seeds, A, Liu, H, Penty, R & White, I 2019, WC3.1-Dynamics of Quantum Dot Lasers on Silicon (Invited). in IEEE Photonics Society Summer Topical Meeting Series 2019, SUM 2019., 8795052, IEEE Photonics Society Summer Topical Meeting Series 2019, SUM 2019, IEEE, 2019 IEEE Photonics Society Summer Topical Meeting Series, SUM 2019, Fort Lauderdale, USA United States, 8/07/19. https://doi.org/10.1109/PHOSST.2019.8795052

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abstract = "InAs/GaAs quantum dot lasers epitaxially grown on silicon substrates are promising candidates as light sources for silicon photonic integrated circuits. We discuss their dynamic properties via small-signal and pulsed simulation and experiment, with a special focus on their potential for data transmission applications.",

keywords = "Modulation, Optical pulses, Quantum dot lasers, semiconductor device modeling, silicon photonics",

author = "Constanze Hantschmann and Peter Vasil'Ev and Siming Chen and Mengya Liao and Alwyn Seeds and Huiyun Liu and Richard Penty and Ian White",

year = "2019",

month = jul,

day = "1",

doi = "10.1109/PHOSST.2019.8795052",

language = "English",

series = "IEEE Photonics Society Summer Topical Meeting Series 2019, SUM 2019",

publisher = "IEEE",

booktitle = "IEEE Photonics Society Summer Topical Meeting Series 2019, SUM 2019",

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AU - Hantschmann, Constanze

AU - Vasil'Ev, Peter

AU - Chen, Siming

AU - Liao, Mengya

AU - Seeds, Alwyn

AU - Liu, Huiyun

AU - Penty, Richard

AU - White, Ian

PY - 2019/7/1

Y1 - 2019/7/1

N2 - InAs/GaAs quantum dot lasers epitaxially grown on silicon substrates are promising candidates as light sources for silicon photonic integrated circuits. We discuss their dynamic properties via small-signal and pulsed simulation and experiment, with a special focus on their potential for data transmission applications.

AB - InAs/GaAs quantum dot lasers epitaxially grown on silicon substrates are promising candidates as light sources for silicon photonic integrated circuits. We discuss their dynamic properties via small-signal and pulsed simulation and experiment, with a special focus on their potential for data transmission applications.

KW - Modulation

KW - Optical pulses

KW - Quantum dot lasers

KW - semiconductor device modeling

KW - silicon photonics

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M3 - Chapter in a published conference proceeding

AN - SCOPUS:85071691894

T3 - IEEE Photonics Society Summer Topical Meeting Series 2019, SUM 2019

BT - IEEE Photonics Society Summer Topical Meeting Series 2019, SUM 2019

PB - IEEE

T2 - 2019 IEEE Photonics Society Summer Topical Meeting Series, SUM 2019

Y2 - 8 July 2019 through 10 July 2019

ER -

WC3.1-Dynamics of Quantum Dot Lasers on Silicon (Invited)

Abstract

Publication series

Conference

Keywords

ASJC Scopus subject areas

Access to Document

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