Abstract
InAs/GaAs quantum dot lasers epitaxially grown on silicon substrates are promising candidates as light sources for silicon photonic integrated circuits. We discuss their dynamic properties via small-signal and pulsed simulation and experiment, with a special focus on their potential for data transmission applications.
Original language | English |
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Title of host publication | IEEE Photonics Society Summer Topical Meeting Series 2019, SUM 2019 |
Publisher | IEEE |
ISBN (Electronic) | 9781728105970 |
DOIs | |
Publication status | Published - 1 Jul 2019 |
Event | 2019 IEEE Photonics Society Summer Topical Meeting Series, SUM 2019 - Fort Lauderdale, USA United States Duration: 8 Jul 2019 → 10 Jul 2019 |
Publication series
Name | IEEE Photonics Society Summer Topical Meeting Series 2019, SUM 2019 |
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Conference
Conference | 2019 IEEE Photonics Society Summer Topical Meeting Series, SUM 2019 |
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Country/Territory | USA United States |
City | Fort Lauderdale |
Period | 8/07/19 → 10/07/19 |
Funding
ACKNOWLDGEMENT This work is supported by UK EPSRC (Grant No. EP/J012904/1, EP/J012815/1). C. H. thanks Qualcomm Inc. for PhD funding. S. C.’s research fellowship is funded by the Royal Academy of Engineering (Ref. No. RF201617/16/28).
Keywords
- Modulation
- Optical pulses
- Quantum dot lasers
- semiconductor device modeling
- silicon photonics
ASJC Scopus subject areas
- Computer Networks and Communications
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Instrumentation
- Atomic and Molecular Physics, and Optics