Waveguide integrated GaN distributed Bragg reflector cavity using low-cost nanolithography

Simeng Jia; Emmanuel D. Le Boulbar; Krishna C. Balram; Jon R. Pugh; Tao Wang; Duncan W.E. Allsopp; Philip A. Shields; Martin J. Cryan

doi:10.1049/mnl.2019.0366

Waveguide integrated GaN distributed Bragg reflector cavity using low-cost nanolithography

Simeng Jia, Emmanuel D. Le Boulbar, Krishna C. Balram, Jon R. Pugh, Tao Wang, Duncan W.E. Allsopp, Philip A. Shields, Martin J. Cryan

Research output: Contribution to journal › Article › peer-review

2 Citations (SciVal)

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Abstract

This work presents the design, fabrication and measurement of gallium nitride (GaN) distributed Bragg reflector cavities integrated with input and output grating couplers. The devices are fabricated using a new, low-cost nanolithography technique: displacement Talbot lithography combined with direct laser writing lithography. The finite-difference time-domain method has been used to design all the components and measured and modelled results show good agreement. Such devices have applications in GaN integrated photonics and biosensing.

Original language	English
Pages (from-to)	1322-1327
Number of pages	6
Journal	Micro and Nano Letters
Volume	14
Issue number	13
DOIs	https://doi.org/10.1049/mnl.2019.0366
Publication status	Published - 20 Nov 2019

ASJC Scopus subject areas

Bioengineering
Biomedical Engineering
General Materials Science
Condensed Matter Physics

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10.1049/mnl.2019.0366

A Waveguide Integrated GaN Distributed Bragg Reflector Cavity Using Low Cost Nanolithography-Simeng Jia
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Cite this

@article{83111dd226ae43d5a7e32522c9bec85f,

title = "Waveguide integrated GaN distributed Bragg reflector cavity using low-cost nanolithography",

abstract = "This work presents the design, fabrication and measurement of gallium nitride (GaN) distributed Bragg reflector cavities integrated with input and output grating couplers. The devices are fabricated using a new, low-cost nanolithography technique: displacement Talbot lithography combined with direct laser writing lithography. The finite-difference time-domain method has been used to design all the components and measured and modelled results show good agreement. Such devices have applications in GaN integrated photonics and biosensing.",

author = "Simeng Jia and {Le Boulbar}, {Emmanuel D.} and Balram, {Krishna C.} and Pugh, {Jon R.} and Tao Wang and Allsopp, {Duncan W.E.} and Shields, {Philip A.} and Cryan, {Martin J.}",

year = "2019",

month = nov,

day = "20",

doi = "10.1049/mnl.2019.0366",

language = "English",

volume = "14",

pages = "1322--1327",

journal = "Micro and Nano Letters",

issn = "1750-0443",

publisher = "John Wiley and Sons Inc.",

number = "13",

}

TY - JOUR

T1 - Waveguide integrated GaN distributed Bragg reflector cavity using low-cost nanolithography

AU - Jia, Simeng

AU - Le Boulbar, Emmanuel D.

AU - Balram, Krishna C.

AU - Pugh, Jon R.

AU - Wang, Tao

AU - Allsopp, Duncan W.E.

AU - Shields, Philip A.

AU - Cryan, Martin J.

PY - 2019/11/20

Y1 - 2019/11/20

N2 - This work presents the design, fabrication and measurement of gallium nitride (GaN) distributed Bragg reflector cavities integrated with input and output grating couplers. The devices are fabricated using a new, low-cost nanolithography technique: displacement Talbot lithography combined with direct laser writing lithography. The finite-difference time-domain method has been used to design all the components and measured and modelled results show good agreement. Such devices have applications in GaN integrated photonics and biosensing.

AB - This work presents the design, fabrication and measurement of gallium nitride (GaN) distributed Bragg reflector cavities integrated with input and output grating couplers. The devices are fabricated using a new, low-cost nanolithography technique: displacement Talbot lithography combined with direct laser writing lithography. The finite-difference time-domain method has been used to design all the components and measured and modelled results show good agreement. Such devices have applications in GaN integrated photonics and biosensing.

UR - http://www.scopus.com/inward/record.url?scp=85074831930&partnerID=8YFLogxK

U2 - 10.1049/mnl.2019.0366

DO - 10.1049/mnl.2019.0366

M3 - Article

AN - SCOPUS:85074831930

SN - 1750-0443

VL - 14

SP - 1322

EP - 1327

JO - Micro and Nano Letters

JF - Micro and Nano Letters

IS - 13

ER -

Waveguide integrated GaN distributed Bragg reflector cavity using low-cost nanolithography

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Manufacturing of Nano-Engineered III-N Semiconductors

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Waveguide integrated GaN distributed Bragg reflector cavity using low-cost nanolithography

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Manufacturing of Nano-Engineered III-N Semiconductors

Manufacturing of Nano-Engineered III-N Semiconductors - Equipment

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