Waveguide integrated GaN distributed Bragg reflector cavity using low-cost nanolithography

Simeng Jia, Emmanuel D. Le Boulbar, Krishna C. Balram, Jon R. Pugh, Tao Wang, Duncan W.E. Allsopp, Philip A. Shields, Martin J. Cryan

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Abstract

This work presents the design, fabrication and measurement of gallium nitride (GaN) distributed Bragg reflector cavities integrated with input and output grating couplers. The devices are fabricated using a new, low-cost nanolithography technique: displacement Talbot lithography combined with direct laser writing lithography. The finite-difference time-domain method has been used to design all the components and measured and modelled results show good agreement. Such devices have applications in GaN integrated photonics and biosensing.

Original languageEnglish
Pages (from-to)1322-1327
Number of pages6
JournalMicro and Nano Letters
Volume14
Issue number13
DOIs
Publication statusPublished - 20 Nov 2019

ASJC Scopus subject areas

  • Bioengineering
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Jia, S., Le Boulbar, E. D., Balram, K. C., Pugh, J. R., Wang, T., Allsopp, D. W. E., Shields, P. A., & Cryan, M. J. (2019). Waveguide integrated GaN distributed Bragg reflector cavity using low-cost nanolithography. Micro and Nano Letters, 14(13), 1322-1327. https://doi.org/10.1049/mnl.2019.0366