Wafer-scale transfer of nanoimprinted patterns into silicon substrates

G Hubbard; S J Abbott; Qin Chen; Duncan W E Allsopp; Wang N Wang; Christopher R Bowen; R Stevens; A Satka; D Hasko; F Uherek; J Kovac

doi:10.1016/j.physe.2008.08.014

Wafer-scale transfer of nanoimprinted patterns into silicon substrates

G Hubbard, S J Abbott, Qin Chen, Duncan W E Allsopp, Wang N Wang, Christopher R Bowen, R Stevens, A Satka, D Hasko, F Uherek, J Kovac

Research output: Contribution to journal › Article › peer-review

24 Citations (SciVal)

Abstract

A simple low cost method of nanoimprinting has been developed. The technique uses a flexible disposable master and lends itself to roll-to-roll processing. Residual layer thicknesses of 5-10 nm are routinely achieved. This enables the critical step of pattern transfer into hard substrates by reactive ion etching, an essential step in the fabrication of sub-wavelength photonic device elements on a wafer-scale.

Original language	English
Pages (from-to)	1118-1121
Number of pages	4
Journal	Physica E-Low-Dimensional Systems & Nanostructures
Volume	41
Issue number	6
Early online date	13 Aug 2008
DOIs	https://doi.org/10.1016/j.physe.2008.08.014
Publication status	Published - May 2009
Event	Spring Meeting of the European-Materials-Research-Society on Frontiers in Silicon-Based Photonics - Strasbourg, France Duration: 8 May 2009 → …

Bibliographical note

Proceedings paper from the Spring Meeting of the European-Materials-Research-Society on Frontiers in Silicon-Based Photonics. Strasbourg, France, 26-29 May, 2008

Keywords

Silicon
Pattern transfer
Nanoimprinting

Access to Document

10.1016/j.physe.2008.08.014

Cite this

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title = "Wafer-scale transfer of nanoimprinted patterns into silicon substrates",

abstract = "A simple low cost method of nanoimprinting has been developed. The technique uses a flexible disposable master and lends itself to roll-to-roll processing. Residual layer thicknesses of 5-10 nm are routinely achieved. This enables the critical step of pattern transfer into hard substrates by reactive ion etching, an essential step in the fabrication of sub-wavelength photonic device elements on a wafer-scale.",

keywords = "Silicon, Pattern transfer, Nanoimprinting",

author = "G Hubbard and Abbott, {S J} and Qin Chen and Allsopp, {Duncan W E} and Wang, {Wang N} and Bowen, {Christopher R} and R Stevens and A Satka and D Hasko and F Uherek and J Kovac",

note = "Proceedings paper from the Spring Meeting of the European-Materials-Research-Society on Frontiers in Silicon-Based Photonics. Strasbourg, France, 26-29 May, 2008; Spring Meeting of the European-Materials-Research-Society on Frontiers in Silicon-Based Photonics ; Conference date: 08-05-2009",

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doi = "10.1016/j.physe.2008.08.014",

language = "English",

volume = "41",

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T1 - Wafer-scale transfer of nanoimprinted patterns into silicon substrates

AU - Hubbard, G

AU - Abbott, S J

AU - Chen, Qin

AU - Allsopp, Duncan W E

AU - Wang, Wang N

AU - Bowen, Christopher R

AU - Stevens, R

AU - Satka, A

AU - Hasko, D

AU - Uherek, F

AU - Kovac, J

N1 - Proceedings paper from the Spring Meeting of the European-Materials-Research-Society on Frontiers in Silicon-Based Photonics. Strasbourg, France, 26-29 May, 2008

PY - 2009/5

Y1 - 2009/5

N2 - A simple low cost method of nanoimprinting has been developed. The technique uses a flexible disposable master and lends itself to roll-to-roll processing. Residual layer thicknesses of 5-10 nm are routinely achieved. This enables the critical step of pattern transfer into hard substrates by reactive ion etching, an essential step in the fabrication of sub-wavelength photonic device elements on a wafer-scale.

AB - A simple low cost method of nanoimprinting has been developed. The technique uses a flexible disposable master and lends itself to roll-to-roll processing. Residual layer thicknesses of 5-10 nm are routinely achieved. This enables the critical step of pattern transfer into hard substrates by reactive ion etching, an essential step in the fabrication of sub-wavelength photonic device elements on a wafer-scale.

KW - Silicon

KW - Pattern transfer

KW - Nanoimprinting

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DO - 10.1016/j.physe.2008.08.014

M3 - Article

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VL - 41

SP - 1118

EP - 1121

JO - Physica E-Low-Dimensional Systems & Nanostructures

JF - Physica E-Low-Dimensional Systems & Nanostructures

IS - 6

T2 - Spring Meeting of the European-Materials-Research-Society on Frontiers in Silicon-Based Photonics

Y2 - 8 May 2009

ER -

Wafer-scale transfer of nanoimprinted patterns into silicon substrates

Abstract

Bibliographical note

Keywords

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