Wafer-scale transfer of nanoimprinted patterns into silicon substrates

G Hubbard, S J Abbott, Qin Chen, Duncan W E Allsopp, Wang N Wang, Christopher R Bowen, R Stevens, A Satka, D Hasko, F Uherek, J Kovac

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Abstract

A simple low cost method of nanoimprinting has been developed. The technique uses a flexible disposable master and lends itself to roll-to-roll processing. Residual layer thicknesses of 5-10 nm are routinely achieved. This enables the critical step of pattern transfer into hard substrates by reactive ion etching, an essential step in the fabrication of sub-wavelength photonic device elements on a wafer-scale.
Original languageEnglish
Pages (from-to)1118-1121
Number of pages4
JournalPhysica E-Low-Dimensional Systems & Nanostructures
Volume41
Issue number6
Early online date13 Aug 2008
DOIs
Publication statusPublished - May 2009
EventSpring Meeting of the European-Materials-Research-Society on Frontiers in Silicon-Based Photonics - Strasbourg, France
Duration: 8 May 2009 → …

Keywords

  • Silicon
  • Pattern transfer
  • Nanoimprinting

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    Hubbard, G., Abbott, S. J., Chen, Q., Allsopp, D. W. E., Wang, W. N., Bowen, C. R., Stevens, R., Satka, A., Hasko, D., Uherek, F., & Kovac, J. (2009). Wafer-scale transfer of nanoimprinted patterns into silicon substrates. Physica E-Low-Dimensional Systems & Nanostructures, 41(6), 1118-1121. https://doi.org/10.1016/j.physe.2008.08.014