Wafer-scale graphene synthesis, transfer and FETs

Kenneth B.K. Teo, B. You, N. L. Rupesinghe, A. Newham, P E Greenwood, S. Buttress, Matthew Cole, L. Tao, J. Lee, D. Akinwande, K. Celebi, H. G. Park, J Sun

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Growth and characterization of graphene grown using copper foils as well as copper films on silicon dioxide on silicon substrates were performed. Kinetics of growth and effective activation energy for the graphene synthesis will be discussed for the surface catalytic synthesis of graphene. Conditions for large-scale synthesis of monolayer graphene will be addressed in this talk. Wafer-scale graphene transfer and electrical results will be presented. Based on our preliminary results from capped 100mm wafer scale graphene transistors, we expect a mobility of 4-6 k cm2/Vs with symmetry hole/electron transport. Key considerations and challenges for scaling are discussed and results for graphene growth on the 300mm wafer scale will be discussed.

Original languageEnglish
Title of host publication13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013
Pages1200-1203
Number of pages4
DOIs
Publication statusPublished - 2013
Event2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013 - Beijing, China
Duration: 5 Aug 20138 Aug 2013

Conference

Conference2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013
CountryChina
CityBeijing
Period5/08/138/08/13

Fingerprint

Graphite
Field effect transistors
Graphene
graphene
field effect transistors
wafers
synthesis
Copper
copper
Silicon
Silicon Dioxide
Metal foil
Monolayers
Activation energy
Silica
foils
transistors
Kinetics
activation energy
silicon dioxide

ASJC Scopus subject areas

  • Bioengineering
  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Condensed Matter Physics

Cite this

Teo, K. B. K., You, B., Rupesinghe, N. L., Newham, A., Greenwood, P. E., Buttress, S., ... Sun, J. (2013). Wafer-scale graphene synthesis, transfer and FETs. In 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013 (pp. 1200-1203). [6720922] https://doi.org/10.1109/NANO.2013.6720922

Wafer-scale graphene synthesis, transfer and FETs. / Teo, Kenneth B.K.; You, B.; Rupesinghe, N. L.; Newham, A.; Greenwood, P E; Buttress, S.; Cole, Matthew; Tao, L.; Lee, J.; Akinwande, D.; Celebi, K.; Park, H. G.; Sun, J.

13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013. 2013. p. 1200-1203 6720922.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Teo, KBK, You, B, Rupesinghe, NL, Newham, A, Greenwood, PE, Buttress, S, Cole, M, Tao, L, Lee, J, Akinwande, D, Celebi, K, Park, HG & Sun, J 2013, Wafer-scale graphene synthesis, transfer and FETs. in 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013., 6720922, pp. 1200-1203, 2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013, Beijing, China, 5/08/13. https://doi.org/10.1109/NANO.2013.6720922
Teo KBK, You B, Rupesinghe NL, Newham A, Greenwood PE, Buttress S et al. Wafer-scale graphene synthesis, transfer and FETs. In 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013. 2013. p. 1200-1203. 6720922 https://doi.org/10.1109/NANO.2013.6720922
Teo, Kenneth B.K. ; You, B. ; Rupesinghe, N. L. ; Newham, A. ; Greenwood, P E ; Buttress, S. ; Cole, Matthew ; Tao, L. ; Lee, J. ; Akinwande, D. ; Celebi, K. ; Park, H. G. ; Sun, J. / Wafer-scale graphene synthesis, transfer and FETs. 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013. 2013. pp. 1200-1203
@inproceedings{0ab48d05a6064298856d938abef79497,
title = "Wafer-scale graphene synthesis, transfer and FETs",
abstract = "Growth and characterization of graphene grown using copper foils as well as copper films on silicon dioxide on silicon substrates were performed. Kinetics of growth and effective activation energy for the graphene synthesis will be discussed for the surface catalytic synthesis of graphene. Conditions for large-scale synthesis of monolayer graphene will be addressed in this talk. Wafer-scale graphene transfer and electrical results will be presented. Based on our preliminary results from capped 100mm wafer scale graphene transistors, we expect a mobility of 4-6 k cm2/Vs with symmetry hole/electron transport. Key considerations and challenges for scaling are discussed and results for graphene growth on the 300mm wafer scale will be discussed.",
author = "Teo, {Kenneth B.K.} and B. You and Rupesinghe, {N. L.} and A. Newham and Greenwood, {P E} and S. Buttress and Matthew Cole and L. Tao and J. Lee and D. Akinwande and K. Celebi and Park, {H. G.} and J Sun",
year = "2013",
doi = "10.1109/NANO.2013.6720922",
language = "English",
isbn = "9781479906758",
pages = "1200--1203",
booktitle = "13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013",

}

TY - GEN

T1 - Wafer-scale graphene synthesis, transfer and FETs

AU - Teo, Kenneth B.K.

AU - You, B.

AU - Rupesinghe, N. L.

AU - Newham, A.

AU - Greenwood, P E

AU - Buttress, S.

AU - Cole, Matthew

AU - Tao, L.

AU - Lee, J.

AU - Akinwande, D.

AU - Celebi, K.

AU - Park, H. G.

AU - Sun, J

PY - 2013

Y1 - 2013

N2 - Growth and characterization of graphene grown using copper foils as well as copper films on silicon dioxide on silicon substrates were performed. Kinetics of growth and effective activation energy for the graphene synthesis will be discussed for the surface catalytic synthesis of graphene. Conditions for large-scale synthesis of monolayer graphene will be addressed in this talk. Wafer-scale graphene transfer and electrical results will be presented. Based on our preliminary results from capped 100mm wafer scale graphene transistors, we expect a mobility of 4-6 k cm2/Vs with symmetry hole/electron transport. Key considerations and challenges for scaling are discussed and results for graphene growth on the 300mm wafer scale will be discussed.

AB - Growth and characterization of graphene grown using copper foils as well as copper films on silicon dioxide on silicon substrates were performed. Kinetics of growth and effective activation energy for the graphene synthesis will be discussed for the surface catalytic synthesis of graphene. Conditions for large-scale synthesis of monolayer graphene will be addressed in this talk. Wafer-scale graphene transfer and electrical results will be presented. Based on our preliminary results from capped 100mm wafer scale graphene transistors, we expect a mobility of 4-6 k cm2/Vs with symmetry hole/electron transport. Key considerations and challenges for scaling are discussed and results for graphene growth on the 300mm wafer scale will be discussed.

UR - http://www.scopus.com/inward/record.url?scp=84894134317&partnerID=8YFLogxK

U2 - 10.1109/NANO.2013.6720922

DO - 10.1109/NANO.2013.6720922

M3 - Conference contribution

SN - 9781479906758

SP - 1200

EP - 1203

BT - 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013

ER -