Wafer-scale graphene synthesis, transfer and FETs

Kenneth B.K. Teo, B. You, N. L. Rupesinghe, A. Newham, P E Greenwood, S. Buttress, Matthew Cole, L. Tao, J. Lee, D. Akinwande, K. Celebi, H. G. Park, J Sun

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Growth and characterization of graphene grown using copper foils as well as copper films on silicon dioxide on silicon substrates were performed. Kinetics of growth and effective activation energy for the graphene synthesis will be discussed for the surface catalytic synthesis of graphene. Conditions for large-scale synthesis of monolayer graphene will be addressed in this talk. Wafer-scale graphene transfer and electrical results will be presented. Based on our preliminary results from capped 100mm wafer scale graphene transistors, we expect a mobility of 4-6 k cm2/Vs with symmetry hole/electron transport. Key considerations and challenges for scaling are discussed and results for graphene growth on the 300mm wafer scale will be discussed.

Original languageEnglish
Title of host publication13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013
Pages1200-1203
Number of pages4
DOIs
Publication statusPublished - 2013
Event2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013 - Beijing, China
Duration: 5 Aug 20138 Aug 2013

Conference

Conference2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013
CountryChina
CityBeijing
Period5/08/138/08/13

ASJC Scopus subject areas

  • Bioengineering
  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Condensed Matter Physics

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