Vg,max - Vth: A new electrical characterization parameter reflecting the polysilicon film quality of LTPS TFTs

Despina C. Moschou, Filippos V. Farmakis, Dimitrios N. Kouvatsos, Apostolos T. Voutsas

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Utilizing both of the most typical theories for the polysilicon trap energy (monoenergetic traps and traps distributed within the band gap), we prove theoretically that the difference Vg,max - Vth is an electrical parameter reflecting the polysilicon trap density. Through experimental data we verify that this parameter is related differently to the polysilicon nature than other known electrical parameters (Vth, Gm,max), thus providing new information about the film traps. Therefore, with this parameter, we suggest an easy, experimental way to directly evaluate the polysilicon film quality, unavailable till now with the already used parameters.

Original languageEnglish
Pages (from-to)76-78
Number of pages3
JournalMicroelectronic Engineering
Volume90
DOIs
Publication statusPublished - Feb 2012

Keywords

  • LTPS TFT
  • Polysilicon gate voltage parameters
  • Polysilicon quality
  • Trap density

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics

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