Abstract
Visible up-conversion luminescence induced by 1535-nm excitation in (ErSc)2O3 epitaxial layers are observed. We investigate fast up-conversion rate and propose its suppression structure by photonic band-gap for realizing higher optical gain devices on Si wafers.
Original language | English |
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Pages | STh1G.4 |
DOIs | |
Publication status | Published - May 2015 |
Event | CLEO: Science and Innovations - San Jose, California Duration: 1 Jan 2015 → … |
Conference
Conference | CLEO: Science and Innovations |
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Period | 1/01/15 → … |