Very high modulation efficiency two-sections tapered laser diode at 1060nm for free space optical communications

M. Ruiz, N. Michel, M. Calligaro, Y. Robert, M. Lecomte, O. Parillaud, M. Krakowski, I. Esquivias, H. Odriozola, J. M.G. Tijero, C. H. Kwok, R. V. Penty, I. H. White

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

High-power (more than 500 mW) and high-speed (more than 1 Gbps) tapered lasers at 1060 nm are required in free-space optical communications and (at lower frequencies of around 100 MHz) display applications for frequency doubling to the green. On a 3 mm long tapered laser, we have obtained an open eye diagram at 1 Gbps, together with a high extinction ratio of 11 dB, an optical modulation amplitude of 530 mW, and a high modulation efficiency of 13 W/A. On a 4 mm-long tapered laser, we have obtained an open eye diagram at 700 Mbps, together with a high extinction ratio of 19 dB, a high optical modulation amplitude of 1.6 W, and a very high modulation efficiency of 19 W/A. On a 6 mm-long tapered laser, we have obtained a very high power of 5W CW and a very high static modulation efficiency of 59.8 W/A.

Original languageEnglish
Title of host publicationProceedings Volume 7953, Novel In-Plane Semiconductor Lasers X
DOIs
Publication statusPublished - 31 Mar 2011
EventNovel In-Plane Semiconductor Lasers X - San Francisco, CA, USA United States
Duration: 25 Jan 201128 Jan 2011

Conference

ConferenceNovel In-Plane Semiconductor Lasers X
CountryUSA United States
CitySan Francisco, CA
Period25/01/1128/01/11

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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