Abstract
High-power (more than 500 mW) and high-speed (more than 1 Gbps) tapered lasers at 1060 nm are required in free-space optical communications and (at lower frequencies of around 100 MHz) display applications for frequency doubling to the green. On a 3 mm long tapered laser, we have obtained an open eye diagram at 1 Gbps, together with a high extinction ratio of 11 dB, an optical modulation amplitude of 530 mW, and a high modulation efficiency of 13 W/A. On a 4 mm-long tapered laser, we have obtained an open eye diagram at 700 Mbps, together with a high extinction ratio of 19 dB, a high optical modulation amplitude of 1.6 W, and a very high modulation efficiency of 19 W/A. On a 6 mm-long tapered laser, we have obtained a very high power of 5W CW and a very high static modulation efficiency of 59.8 W/A.
Original language | English |
---|---|
Title of host publication | Proceedings Volume 7953, Novel In-Plane Semiconductor Lasers X |
DOIs | |
Publication status | Published - 31 Mar 2011 |
Event | Novel In-Plane Semiconductor Lasers X - San Francisco, CA, USA United States Duration: 25 Jan 2011 → 28 Jan 2011 |
Conference
Conference | Novel In-Plane Semiconductor Lasers X |
---|---|
Country/Territory | USA United States |
City | San Francisco, CA |
Period | 25/01/11 → 28/01/11 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering