TY - JOUR
T1 - Valley polarization in Si(100) at zero magnetic field
AU - Takashina, Kei
AU - Ono, Yukinori
AU - Fujiwara, Akira
AU - Takahashi, Yasuo
AU - Hirayama, Yoshiro
PY - 2006/6/12
Y1 - 2006/6/12
N2 - The valley splitting, which lifts the degeneracy of the lowest two valley states in a SiO2/Si(100)/SiO2 quantum well, is examined through transport measurements. We demonstrate that the valley splitting can be observed directly as a step in the conductance defining a boundary between valley-unpolarized and -polarized regions. This persists to well above liquid helium temperature and shows no dependence on magnetic field, indicating that single-particle valley splitting and valley polarization exist in (100) silicon even at zero magnetic field.
AB - The valley splitting, which lifts the degeneracy of the lowest two valley states in a SiO2/Si(100)/SiO2 quantum well, is examined through transport measurements. We demonstrate that the valley splitting can be observed directly as a step in the conductance defining a boundary between valley-unpolarized and -polarized regions. This persists to well above liquid helium temperature and shows no dependence on magnetic field, indicating that single-particle valley splitting and valley polarization exist in (100) silicon even at zero magnetic field.
UR - http://dx.doi.org/10.1103/PhysRevLett.96.236801
U2 - 10.1103/PhysRevLett.96.236801
DO - 10.1103/PhysRevLett.96.236801
M3 - Article
SN - 0031-9007
VL - 96
JO - Physical Review Letters
JF - Physical Review Letters
IS - 23
M1 - 236801
ER -