Valley polarization in Si(100) at zero magnetic field

Kei Takashina, Yukinori Ono, Akira Fujiwara, Yasuo Takahashi, Yoshiro Hirayama

Research output: Contribution to journalArticle

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Abstract

The valley splitting, which lifts the degeneracy of the lowest two valley states in a SiO2/Si(100)/SiO2 quantum well, is examined through transport measurements. We demonstrate that the valley splitting can be observed directly as a step in the conductance defining a boundary between valley-unpolarized and -polarized regions. This persists to well above liquid helium temperature and shows no dependence on magnetic field, indicating that single-particle valley splitting and valley polarization exist in (100) silicon even at zero magnetic field.
Original languageEnglish
Article number236801
Number of pages4
JournalPhysical Review Letters
Volume96
Issue number23
DOIs
Publication statusPublished - 12 Jun 2006

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valleys
polarization
magnetic fields
liquid helium
quantum wells
silicon
temperature

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Valley polarization in Si(100) at zero magnetic field. / Takashina, Kei; Ono, Yukinori; Fujiwara, Akira; Takahashi, Yasuo; Hirayama, Yoshiro.

In: Physical Review Letters, Vol. 96, No. 23, 236801, 12.06.2006.

Research output: Contribution to journalArticle

Takashina, Kei ; Ono, Yukinori ; Fujiwara, Akira ; Takahashi, Yasuo ; Hirayama, Yoshiro. / Valley polarization in Si(100) at zero magnetic field. In: Physical Review Letters. 2006 ; Vol. 96, No. 23.
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