Vacancy-type defects in TiO2/SiO2/SiC dielectric stacks

P G Coleman, C P Burrows, R Mahapatra, N G Wright

Research output: Contribution to journal › Article › peer-review

6 Citations (SciVal)

ID number: ISI:000248018300081

Cite this

@article{d806852c16a447e1b0584c93b3824021,

title = "Vacancy-type defects in TiO2/SiO2/SiC dielectric stacks",

author = "Coleman, \{P G\} and Burrows, \{C P\} and R Mahapatra and Wright, \{N G\}",

note = "ID number: ISI:000248018300081",

year = "2007",

language = "English",

volume = "102",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "1",

}

TY - JOUR

T1 - Vacancy-type defects in TiO2/SiO2/SiC dielectric stacks

AU - Coleman, P G

AU - Burrows, C P

AU - Mahapatra, R

AU - Wright, N G

N1 - ID number: ISI:000248018300081

PY - 2007

Y1 - 2007

UR - https://www.scopus.com/pages/publications/34547165484

M3 - Article

SN - 0021-8979

VL - 102

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 1

ER -