Unipolar resistive switching in metal oxide/organic semiconductor non-volatile memories as a critical phenomenon

Benjamin F. Bory, Paulo R F Rocha, Henrique L. Gomes, Dago M. De Leeuw, Stefan C J Meskers

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6 Citations (Scopus)
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Abstract

Diodes incorporating a bilayer of an organic semiconductor and a wide bandgap metal oxide can show unipolar, non-volatile memory behavior after electroforming. The prolonged bias voltage stress induces defects in the metal oxide with an areal density exceeding 1017m-2. We explain the electrical bistability by the coexistence of two thermodynamically stable phases at the interface between an organic semiconductor and metal oxide. One phase contains mainly ionized defects and has a low work function, while the other phase has mainly neutral defects and a high work function. In the diodes, domains of the phase with a low work function constitute current filaments. The phase composition and critical temperature are derived from a 2D Ising model as a function of chemical potential. The model predicts filamentary conduction exhibiting a negative differential resistance and nonvolatile memory behavior. The model is expected to be generally applicable to any bilayer system that shows unipolar resistive switching.

Original languageEnglish
Article number205503
JournalJournal of Applied Physics
Volume118
Issue number20
DOIs
Publication statusPublished - 28 Nov 2015

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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