Uncooled quantum dot semiconductor optical amplifiers

I. H. White; R. V. Penty; H. Wang; M. G. Thompson; E. T. Aw

doi:10.1109/LEOS.2008.4688624

Uncooled quantum dot semiconductor optical amplifiers

I. H. White
, R. V. Penty
, H. Wang
, M. G. Thompson
, E. T. Aw

Vice Chancellor's Office

University of Cambridge

Research output: Chapter or section in a book/report/conference proceeding › Chapter in a published conference proceeding

Abstract

Recent studies on 1.3μm InGaAs/GaAs QD-SOAs show they are able to deliver >18dB gain across a 20 to 70°C temperature range. Successful system demonstrations over temperature are reported at channel rates of 10 Gb/s.

Original language	English
Title of host publication	21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2008
Place of Publication	U. S. A.
Publisher	IEEE
Pages	330-331
Number of pages	2
ISBN (Print)	9781424419326
DOIs	https://doi.org/10.1109/LEOS.2008.4688624
Publication status	Published - 1 Dec 2008
Event	21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2008 - Newport Beach, CA, USA United States Duration: 9 Nov 2008 → 13 Nov 2008

Conference

Conference	21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2008
Country/Territory	USA United States
City	Newport Beach, CA
Period	9/11/08 → 13/11/08

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/LEOS.2008.4688624

Cite this

White, IH, Penty, RV, Wang, H, Thompson, MG & Aw, ET 2008, Uncooled quantum dot semiconductor optical amplifiers. in 21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2008., 4688624, IEEE, U. S. A., pp. 330-331, 21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2008, Newport Beach, CA, USA United States, 9/11/08. https://doi.org/10.1109/LEOS.2008.4688624

@inproceedings{7ce5c8a9a9a443f98021904312a87c58,

title = "Uncooled quantum dot semiconductor optical amplifiers",

abstract = "Recent studies on 1.3μm InGaAs/GaAs QD-SOAs show they are able to deliver >18dB gain across a 20 to 70°C temperature range. Successful system demonstrations over temperature are reported at channel rates of 10 Gb/s.",

author = "White, \{I. H.\} and Penty, \{R. V.\} and H. Wang and Thompson, \{M. G.\} and Aw, \{E. T.\}",

year = "2008",

month = dec,

day = "1",

doi = "10.1109/LEOS.2008.4688624",

language = "English",

isbn = "9781424419326",

pages = "330--331",

booktitle = "21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2008",

publisher = "IEEE",

address = "USA United States",

note = "21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2008 ; Conference date: 09-11-2008 Through 13-11-2008",

}

TY - GEN

T1 - Uncooled quantum dot semiconductor optical amplifiers

AU - White, I. H.

AU - Penty, R. V.

AU - Wang, H.

AU - Thompson, M. G.

AU - Aw, E. T.

PY - 2008/12/1

Y1 - 2008/12/1

N2 - Recent studies on 1.3μm InGaAs/GaAs QD-SOAs show they are able to deliver >18dB gain across a 20 to 70°C temperature range. Successful system demonstrations over temperature are reported at channel rates of 10 Gb/s.

AB - Recent studies on 1.3μm InGaAs/GaAs QD-SOAs show they are able to deliver >18dB gain across a 20 to 70°C temperature range. Successful system demonstrations over temperature are reported at channel rates of 10 Gb/s.

UR - https://www.scopus.com/pages/publications/58049135054

U2 - 10.1109/LEOS.2008.4688624

DO - 10.1109/LEOS.2008.4688624

M3 - Chapter in a published conference proceeding

AN - SCOPUS:58049135054

SN - 9781424419326

SP - 330

EP - 331

BT - 21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2008

PB - IEEE

CY - U. S. A.

T2 - 21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2008

Y2 - 9 November 2008 through 13 November 2008

ER -

Uncooled quantum dot semiconductor optical amplifiers

Abstract

Conference

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this