Ultraviolet Emission from Resonant Tunnelling Metal-Insulator-Semiconductor Light Emitting Tunnel Diodes

Chen Sheng Lin, Kate Cavanagh, Hei Chit L. Tsui, Andrei Mihai, Bin Zou, Duncan W.E. Allsopp, Michelle A. Moram

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Strong room-temperature electroluminescence at 365 nm has been demonstrated from simple Au/AlN/n-GaN metal-insulator-semiconductor (MIS) light emitting diodes, which do not contain p-doped material. Current-voltage and electroluminescence data indicate that an AlN insulating layer thickness of 10 nm results in optimized diode behavior and maximum ultraviolet emission: At lower thicknesses carriers tunnel easily through the barrier, whereas at greater thicknesses the forward resistivity is excessively high. A decrease in emission intensity was observed at high injection currents due to Fowler-Nordheim tunnelling. However the device efficiency was found to improve by a factor of 10 when the AlN layer and the metal contact layer were deposited without breaking vacuum, thereby preventing any contamination or oxidation of the AlN surface. Additionally, this MIS device showed clear resonant tunnelling characteristics which are correlated with the enhanced light emission intensity.

Original languageEnglish
Article number7947132
Pages (from-to)1-8
Number of pages8
JournalIEEE Photonics Journal
Volume9
Issue number4
Early online date13 Jun 2017
DOIs
Publication statusPublished - 1 Aug 2017

Fingerprint

Tunnel diodes
Resonant tunneling
tunnel diodes
ultraviolet emission
resonant tunneling
MIS (semiconductors)
Light emitting diodes
light emitting diodes
Electroluminescence
Semiconductor materials
electroluminescence
Metals
semiconductor diodes
Light emission
Semiconductor devices
semiconductor devices
Field emission
light emission
tunnels
electric contacts

Keywords

  • AlN/GaN
  • electroluminescence
  • metal-insulator-semiconductor device
  • Resonant tunnelling diodes
  • ultraviolet light emitting diodes

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

Lin, C. S., Cavanagh, K., Tsui, H. C. L., Mihai, A., Zou, B., Allsopp, D. W. E., & Moram, M. A. (2017). Ultraviolet Emission from Resonant Tunnelling Metal-Insulator-Semiconductor Light Emitting Tunnel Diodes. IEEE Photonics Journal, 9(4), 1-8. [7947132]. https://doi.org/10.1109/JPHOT.2017.2714341

Ultraviolet Emission from Resonant Tunnelling Metal-Insulator-Semiconductor Light Emitting Tunnel Diodes. / Lin, Chen Sheng; Cavanagh, Kate; Tsui, Hei Chit L.; Mihai, Andrei; Zou, Bin; Allsopp, Duncan W.E.; Moram, Michelle A.

In: IEEE Photonics Journal, Vol. 9, No. 4, 7947132, 01.08.2017, p. 1-8.

Research output: Contribution to journalArticle

Lin, CS, Cavanagh, K, Tsui, HCL, Mihai, A, Zou, B, Allsopp, DWE & Moram, MA 2017, 'Ultraviolet Emission from Resonant Tunnelling Metal-Insulator-Semiconductor Light Emitting Tunnel Diodes', IEEE Photonics Journal, vol. 9, no. 4, 7947132, pp. 1-8. https://doi.org/10.1109/JPHOT.2017.2714341
Lin, Chen Sheng ; Cavanagh, Kate ; Tsui, Hei Chit L. ; Mihai, Andrei ; Zou, Bin ; Allsopp, Duncan W.E. ; Moram, Michelle A. / Ultraviolet Emission from Resonant Tunnelling Metal-Insulator-Semiconductor Light Emitting Tunnel Diodes. In: IEEE Photonics Journal. 2017 ; Vol. 9, No. 4. pp. 1-8.
@article{bbe79423ae854e2f8896cbc795980dd1,
title = "Ultraviolet Emission from Resonant Tunnelling Metal-Insulator-Semiconductor Light Emitting Tunnel Diodes",
abstract = "Strong room-temperature electroluminescence at 365 nm has been demonstrated from simple Au/AlN/n-GaN metal-insulator-semiconductor (MIS) light emitting diodes, which do not contain p-doped material. Current-voltage and electroluminescence data indicate that an AlN insulating layer thickness of 10 nm results in optimized diode behavior and maximum ultraviolet emission: At lower thicknesses carriers tunnel easily through the barrier, whereas at greater thicknesses the forward resistivity is excessively high. A decrease in emission intensity was observed at high injection currents due to Fowler-Nordheim tunnelling. However the device efficiency was found to improve by a factor of 10 when the AlN layer and the metal contact layer were deposited without breaking vacuum, thereby preventing any contamination or oxidation of the AlN surface. Additionally, this MIS device showed clear resonant tunnelling characteristics which are correlated with the enhanced light emission intensity.",
keywords = "AlN/GaN, electroluminescence, metal-insulator-semiconductor device, Resonant tunnelling diodes, ultraviolet light emitting diodes",
author = "Lin, {Chen Sheng} and Kate Cavanagh and Tsui, {Hei Chit L.} and Andrei Mihai and Bin Zou and Allsopp, {Duncan W.E.} and Moram, {Michelle A.}",
year = "2017",
month = "8",
day = "1",
doi = "10.1109/JPHOT.2017.2714341",
language = "English",
volume = "9",
pages = "1--8",
journal = "IEEE Photonics Journal",
issn = "1943-0655",
publisher = "IEEE",
number = "4",

}

TY - JOUR

T1 - Ultraviolet Emission from Resonant Tunnelling Metal-Insulator-Semiconductor Light Emitting Tunnel Diodes

AU - Lin, Chen Sheng

AU - Cavanagh, Kate

AU - Tsui, Hei Chit L.

AU - Mihai, Andrei

AU - Zou, Bin

AU - Allsopp, Duncan W.E.

AU - Moram, Michelle A.

PY - 2017/8/1

Y1 - 2017/8/1

N2 - Strong room-temperature electroluminescence at 365 nm has been demonstrated from simple Au/AlN/n-GaN metal-insulator-semiconductor (MIS) light emitting diodes, which do not contain p-doped material. Current-voltage and electroluminescence data indicate that an AlN insulating layer thickness of 10 nm results in optimized diode behavior and maximum ultraviolet emission: At lower thicknesses carriers tunnel easily through the barrier, whereas at greater thicknesses the forward resistivity is excessively high. A decrease in emission intensity was observed at high injection currents due to Fowler-Nordheim tunnelling. However the device efficiency was found to improve by a factor of 10 when the AlN layer and the metal contact layer were deposited without breaking vacuum, thereby preventing any contamination or oxidation of the AlN surface. Additionally, this MIS device showed clear resonant tunnelling characteristics which are correlated with the enhanced light emission intensity.

AB - Strong room-temperature electroluminescence at 365 nm has been demonstrated from simple Au/AlN/n-GaN metal-insulator-semiconductor (MIS) light emitting diodes, which do not contain p-doped material. Current-voltage and electroluminescence data indicate that an AlN insulating layer thickness of 10 nm results in optimized diode behavior and maximum ultraviolet emission: At lower thicknesses carriers tunnel easily through the barrier, whereas at greater thicknesses the forward resistivity is excessively high. A decrease in emission intensity was observed at high injection currents due to Fowler-Nordheim tunnelling. However the device efficiency was found to improve by a factor of 10 when the AlN layer and the metal contact layer were deposited without breaking vacuum, thereby preventing any contamination or oxidation of the AlN surface. Additionally, this MIS device showed clear resonant tunnelling characteristics which are correlated with the enhanced light emission intensity.

KW - AlN/GaN

KW - electroluminescence

KW - metal-insulator-semiconductor device

KW - Resonant tunnelling diodes

KW - ultraviolet light emitting diodes

UR - http://www.scopus.com/inward/record.url?scp=85021711065&partnerID=8YFLogxK

U2 - 10.1109/JPHOT.2017.2714341

DO - 10.1109/JPHOT.2017.2714341

M3 - Article

VL - 9

SP - 1

EP - 8

JO - IEEE Photonics Journal

JF - IEEE Photonics Journal

SN - 1943-0655

IS - 4

M1 - 7947132

ER -