Ultraviolet-assisted curing of organosilicate glass low-k dielectric by excimer lamps

S Eslava, F. Iacopi, A.M. Urbanowicz, C.E.A. Kirschhock, K. Maex, J.A. Martens, M.R. Baklanov

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Abstract

A series of low- k films was exposed to UV-assisted curing (UV curing) with excimer lamps. The influence of the UV-curing wavelength, the UV-curing time, and the maximum pretreatment temperature were investigated. A mechanical, chemical, and optical characterization of this set of experiments is presented. It is revealed that the exposure to UV curing with 172 nm had sufficient energy to abundantly photodissociate Si-C H3 groups and to shrink the films. In turn, the elastic modulus was enhanced. As a side effect caused by the photodissociation of Si-CH groups, the content of Si-OH and Si-H moieties increased. Longer wavelengths (222 and 308 nm) showed less-drastic effects on low- k films because they do not provide sufficient energy to photodissociate Si-CH groups. This fundamental difference existing between different UV-curing wavelengths is evidenced by the optical characterization. Furthermore, this work also reveals the effect of pretreatment temperature on UV curing. Low pretreatment temperatures are required to keep enough photochemical reactivity and matrix mobility.
LanguageEnglish
JournalJournal of the Electrochemical Society
Volume155
Issue number11
DOIs
StatusPublished - 1 Jan 2008

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excimers
curing
Electric lamps
luminaires
Curing
Glass
glass
pretreatment
Wavelength
wavelengths
methylidyne
Photodissociation
photodissociation
Temperature
temperature
Low-k dielectric
modulus of elasticity
reactivity
Elastic moduli
energy

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Eslava, S., Iacopi, F., Urbanowicz, A. M., Kirschhock, C. E. A., Maex, K., Martens, J. A., & Baklanov, M. R. (2008). Ultraviolet-assisted curing of organosilicate glass low-k dielectric by excimer lamps. Journal of the Electrochemical Society, 155(11). DOI: 10.1149/1.2971025

Ultraviolet-assisted curing of organosilicate glass low-k dielectric by excimer lamps. / Eslava, S; Iacopi, F.; Urbanowicz, A.M.; Kirschhock, C.E.A.; Maex, K.; Martens, J.A.; Baklanov, M.R.

In: Journal of the Electrochemical Society, Vol. 155, No. 11, 01.01.2008.

Research output: Contribution to journalArticle

Eslava, S, Iacopi, F, Urbanowicz, AM, Kirschhock, CEA, Maex, K, Martens, JA & Baklanov, MR 2008, 'Ultraviolet-assisted curing of organosilicate glass low-k dielectric by excimer lamps' Journal of the Electrochemical Society, vol 155, no. 11. DOI: 10.1149/1.2971025
Eslava S, Iacopi F, Urbanowicz AM, Kirschhock CEA, Maex K, Martens JA et al. Ultraviolet-assisted curing of organosilicate glass low-k dielectric by excimer lamps. Journal of the Electrochemical Society. 2008 Jan 1;155(11). Available from, DOI: 10.1149/1.2971025
Eslava, S ; Iacopi, F. ; Urbanowicz, A.M. ; Kirschhock, C.E.A. ; Maex, K. ; Martens, J.A. ; Baklanov, M.R./ Ultraviolet-assisted curing of organosilicate glass low-k dielectric by excimer lamps. In: Journal of the Electrochemical Society. 2008 ; Vol. 155, No. 11.
@article{b0d791a587394ac992dadc99de56d5a0,
title = "Ultraviolet-assisted curing of organosilicate glass low-k dielectric by excimer lamps",
abstract = "A series of low- k films was exposed to UV-assisted curing (UV curing) with excimer lamps. The influence of the UV-curing wavelength, the UV-curing time, and the maximum pretreatment temperature were investigated. A mechanical, chemical, and optical characterization of this set of experiments is presented. It is revealed that the exposure to UV curing with 172 nm had sufficient energy to abundantly photodissociate Si-C H3 groups and to shrink the films. In turn, the elastic modulus was enhanced. As a side effect caused by the photodissociation of Si-CH groups, the content of Si-OH and Si-H moieties increased. Longer wavelengths (222 and 308 nm) showed less-drastic effects on low- k films because they do not provide sufficient energy to photodissociate Si-CH groups. This fundamental difference existing between different UV-curing wavelengths is evidenced by the optical characterization. Furthermore, this work also reveals the effect of pretreatment temperature on UV curing. Low pretreatment temperatures are required to keep enough photochemical reactivity and matrix mobility.",
author = "S Eslava and F. Iacopi and A.M. Urbanowicz and C.E.A. Kirschhock and K. Maex and J.A. Martens and M.R. Baklanov",
year = "2008",
month = "1",
day = "1",
doi = "10.1149/1.2971025",
language = "English",
volume = "155",
journal = "Journal of the Electrochemical Society",
issn = "0013-4651",
publisher = "Electrochemical Society, Inc.",
number = "11",

}

TY - JOUR

T1 - Ultraviolet-assisted curing of organosilicate glass low-k dielectric by excimer lamps

AU - Eslava,S

AU - Iacopi,F.

AU - Urbanowicz,A.M.

AU - Kirschhock,C.E.A.

AU - Maex,K.

AU - Martens,J.A.

AU - Baklanov,M.R.

PY - 2008/1/1

Y1 - 2008/1/1

N2 - A series of low- k films was exposed to UV-assisted curing (UV curing) with excimer lamps. The influence of the UV-curing wavelength, the UV-curing time, and the maximum pretreatment temperature were investigated. A mechanical, chemical, and optical characterization of this set of experiments is presented. It is revealed that the exposure to UV curing with 172 nm had sufficient energy to abundantly photodissociate Si-C H3 groups and to shrink the films. In turn, the elastic modulus was enhanced. As a side effect caused by the photodissociation of Si-CH groups, the content of Si-OH and Si-H moieties increased. Longer wavelengths (222 and 308 nm) showed less-drastic effects on low- k films because they do not provide sufficient energy to photodissociate Si-CH groups. This fundamental difference existing between different UV-curing wavelengths is evidenced by the optical characterization. Furthermore, this work also reveals the effect of pretreatment temperature on UV curing. Low pretreatment temperatures are required to keep enough photochemical reactivity and matrix mobility.

AB - A series of low- k films was exposed to UV-assisted curing (UV curing) with excimer lamps. The influence of the UV-curing wavelength, the UV-curing time, and the maximum pretreatment temperature were investigated. A mechanical, chemical, and optical characterization of this set of experiments is presented. It is revealed that the exposure to UV curing with 172 nm had sufficient energy to abundantly photodissociate Si-C H3 groups and to shrink the films. In turn, the elastic modulus was enhanced. As a side effect caused by the photodissociation of Si-CH groups, the content of Si-OH and Si-H moieties increased. Longer wavelengths (222 and 308 nm) showed less-drastic effects on low- k films because they do not provide sufficient energy to photodissociate Si-CH groups. This fundamental difference existing between different UV-curing wavelengths is evidenced by the optical characterization. Furthermore, this work also reveals the effect of pretreatment temperature on UV curing. Low pretreatment temperatures are required to keep enough photochemical reactivity and matrix mobility.

UR - http://www.scopus.com/inward/record.url?scp=52649175371&partnerID=8YFLogxK

UR - http://dx.doi.org/10.1149/1.2971025

U2 - 10.1149/1.2971025

DO - 10.1149/1.2971025

M3 - Article

VL - 155

JO - Journal of the Electrochemical Society

T2 - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 11

ER -