Ultrashort superradiant pulse generation from a GaN/InGaN heterostructure

V. F. Olle, P. P. Vasil'ev, A. Wonfor, R. V. Penty, I. H. White

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Dicke superradiance from a two-section violet GaN/InGaN semiconductor laser diode is demonstrated for the first time. In the superradiance regime, optical pulses with peak powers in excess of 2.8 w and durations as short as 1.4 ps are generated at repetition rates of up to 10 MHz at the emission wavelength of 408 nm. The properties of superradiant pulse generation from these GaN/InGaN laser diodes are very similar to those reported for infrared AlGaAs/GaAs laser diodes.

Original languageEnglish
Pages (from-to)7035-7039
Number of pages5
JournalOptics Express
Volume20
Issue number7
DOIs
Publication statusPublished - 26 Mar 2012

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Ultrashort superradiant pulse generation from a GaN/InGaN heterostructure. / Olle, V. F.; Vasil'ev, P. P.; Wonfor, A.; Penty, R. V.; White, I. H.

In: Optics Express, Vol. 20, No. 7, 26.03.2012, p. 7035-7039.

Research output: Contribution to journalArticle

Olle, V. F. ; Vasil'ev, P. P. ; Wonfor, A. ; Penty, R. V. ; White, I. H. / Ultrashort superradiant pulse generation from a GaN/InGaN heterostructure. In: Optics Express. 2012 ; Vol. 20, No. 7. pp. 7035-7039.
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