Ultrashort superradiant pulse generation from a GaN/InGaN heterostructure

V. F. Olle; P. P. Vasil'ev; A. Wonfor; R. V. Penty; I. H. White

doi:10.1364/OE.20.007035

Ultrashort superradiant pulse generation from a GaN/InGaN heterostructure

V. F. Olle, P. P. Vasil'ev, A. Wonfor, R. V. Penty, I. H. White

Vice Chancellor's Office

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19 Citations (SciVal)

Abstract

Dicke superradiance from a two-section violet GaN/InGaN semiconductor laser diode is demonstrated for the first time. In the superradiance regime, optical pulses with peak powers in excess of 2.8 w and durations as short as 1.4 ps are generated at repetition rates of up to 10 MHz at the emission wavelength of 408 nm. The properties of superradiant pulse generation from these GaN/InGaN laser diodes are very similar to those reported for infrared AlGaAs/GaAs laser diodes.

Original language	English
Pages (from-to)	7035-7039
Number of pages	5
Journal	Optics Express
Volume	20
Issue number	7
DOIs	https://doi.org/10.1364/OE.20.007035
Publication status	Published - 26 Mar 2012

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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abstract = "Dicke superradiance from a two-section violet GaN/InGaN semiconductor laser diode is demonstrated for the first time. In the superradiance regime, optical pulses with peak powers in excess of 2.8 w and durations as short as 1.4 ps are generated at repetition rates of up to 10 MHz at the emission wavelength of 408 nm. The properties of superradiant pulse generation from these GaN/InGaN laser diodes are very similar to those reported for infrared AlGaAs/GaAs laser diodes.",

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AU - Olle, V. F.

AU - Vasil'ev, P. P.

AU - Wonfor, A.

AU - Penty, R. V.

AU - White, I. H.

PY - 2012/3/26

Y1 - 2012/3/26

N2 - Dicke superradiance from a two-section violet GaN/InGaN semiconductor laser diode is demonstrated for the first time. In the superradiance regime, optical pulses with peak powers in excess of 2.8 w and durations as short as 1.4 ps are generated at repetition rates of up to 10 MHz at the emission wavelength of 408 nm. The properties of superradiant pulse generation from these GaN/InGaN laser diodes are very similar to those reported for infrared AlGaAs/GaAs laser diodes.

AB - Dicke superradiance from a two-section violet GaN/InGaN semiconductor laser diode is demonstrated for the first time. In the superradiance regime, optical pulses with peak powers in excess of 2.8 w and durations as short as 1.4 ps are generated at repetition rates of up to 10 MHz at the emission wavelength of 408 nm. The properties of superradiant pulse generation from these GaN/InGaN laser diodes are very similar to those reported for infrared AlGaAs/GaAs laser diodes.

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DO - 10.1364/OE.20.007035

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AN - SCOPUS:84859392149

SN - 1094-4087

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EP - 7039

JO - Optics Express

JF - Optics Express

IS - 7

ER -

Ultrashort superradiant pulse generation from a GaN/InGaN heterostructure

Abstract

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