Ultrashort pulse semiconductor lasers with improved timing jitter

D. M. Hughes, D. Burns, W. Sibbett, K. A. Williams, I. H. White, J. F. Allen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A comprehensive study of the ultrashort pulse InGaAsP semiconductor lasers is detailed. High resolution temporal pulse profiles and optical spectra were recorded along with both correlated and uncorrelated timing jitter data. The influence of modulation frequency at 650 MHz in ultrashort pulse semiconductor lasers is also examined. The performance of picosecond pulse multi-contact lasers employing Q-switching, and injection seeded gain-switched lasers are also evaluated with respect to their inherent timing jitter.

Original languageEnglish
Title of host publicationConference Proceedings - Lasers and Electro-Optics Society Annual Meeting
PublisherIEEE
Pages255-256
Number of pages2
ISBN (Print)0780319710
Publication statusPublished - 1 Jan 1994
EventProceedings of the Conference on Lasers and Electro-Optics - Anaheim, CA, USA
Duration: 8 May 199413 May 1994

Publication series

NameConference Proceedings - Lasers and Electro-Optics Society Annual Meeting
Volume8

Conference

ConferenceProceedings of the Conference on Lasers and Electro-Optics
CityAnaheim, CA, USA
Period8/05/9413/05/94

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Hughes, D. M., Burns, D., Sibbett, W., Williams, K. A., White, I. H., & Allen, J. F. (1994). Ultrashort pulse semiconductor lasers with improved timing jitter. In Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting (pp. 255-256). (Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting; Vol. 8). IEEE.