Ultrashort pulse generation in diode laser devices

Ian H. White, Peter P. Vasil'Ev, Richard V. Penty

Research output: Chapter or section in a book/report/conference proceedingChapter in a published conference proceeding

1 Citation (SciVal)


The generation of ultrashort optical pulses by semiconductor lasers has been extensively studied for many years. A number of methods, including gain-/Q-switching and different types of mode locking, have been exploited for the generation of picosecond and sub-picosecond pulses [1]. However, the shortest pulses produced by diode lasers are still much longer and weaker than those that are generated by advanced mode-locked solid-state laser systems [2]. On the other hand, an interesting class of devices based on superradiant emission from multiple contact diode laser structures has also been recently reported [3]. Superradiance (SR) is a transient quantum optics phenomenon based on the cooperative radiative recombination of a large number of oscillators, including atoms, molecules, e-h pairs, etc. SR in semiconductors can be used for the study of fundamental properties of e-h ensembles such as photon-mediated pairing, non-equilibrium e-h condensation, BSC-like coherent states and related phenomena. Due to the intrinsic parameters of semiconductor media, SR emission typically results in the generation of a high-power optical pulse or pulse train, where the pulse duration can be much less than 1 ps, under optimised bias conditions. Advantages of this technique over mode locking in semiconductor laser structures include potentially shorter pulsewidths and much larger peak powers. Moreover, the pulse repetition rate of mode-locked pulses is fixed by the cavity round trip time, whereas the repetition rate of SR pulses is controlled by the current bias and can be varied over a wide range.

Original languageEnglish
Title of host publication2012 IEEE Photonics Conference, IPC 2012
Number of pages2
Publication statusPublished - 1 Dec 2012
Event25th IEEE Photonics Conference, IPC 2012 - Burlingame, CA, USA United States
Duration: 23 Sept 201227 Sept 2012


Conference25th IEEE Photonics Conference, IPC 2012
Country/TerritoryUSA United States
CityBurlingame, CA

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


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