Ultrafast Electron Tunneling Devices—from Electric-field driven to Optical-field driven

Shenghan Zhou; Ke Chen; Matthew Cole; Zhenjun Li; Mo Li; Jun  Chen; Christoph Lienau; Chi Li; Qing Dai

doi:10.1002/adma.202101449

Ultrafast Electron Tunneling Devices—from Electric-field driven to Optical-field driven

Shenghan Zhou, Ke Chen, Matthew Cole, Zhenjun Li, Mo Li, Jun Chen, Christoph Lienau, Chi Li, Qing Dai

Research output: Contribution to journal › Review article › peer-review

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Abstract

The search for ever higher frequency information processing has become an area of intense research activity within the micro, nano, and optoelectronics communities. Compared to conventional semiconductor-based diffusive transport electron devices, electron tunneling devices provide significantly faster response times due to near-instantaneous tunneling that occurs at sub-femtosecond timescales. As a result, the enhanced performance of electron tunneling devices is demonstrated, time and again, to reimagine a wide variety of traditional electronic devices with a variety of new “lightwave electronics” emerging, each capable of reducing the electron transport channel transit time down to attosecond timescales. In response to unprecedented rapid progress within this field, here the current state-of-the-art in electron tunneling devices is reviewed, current challenges and opportunities are highlighted, and possible future research directions are identified.

Original language	English
Article number	2101449
Journal	Advanced Materials
Volume	33
Issue number	35
Early online date	8 Jul 2021
DOIs	https://doi.org/10.1002/adma.202101449
Publication status	Published - 2 Sept 2021

Bibliographical note

Funding Information:
The authors acknowledge funding from the National Key R&D Program of China (Grant No. 2016YFA0202000), the National Natural Science Foundation of China (Grant Nos. 51972072, 52072084, 51925203 and 91833303), the Key Research Program of the Chinese Academy of Sciences (Grant No. ZDBS‐SSW‐JSC002), CAS Interdisciplinary Innovation Team (Grant No. JCTD‐2018‐03), the Strategic Priority Research Program of the Chinese Academy of Sciences (Grant Nos. XDB36000000), and the Priority program QUTIF of the Deutsche Forschungsgemeinschaft (SPP1840).

Keywords

direct tunneling
electron tunneling devices
inelastic tunneling
optical-field-driven
resonant tunneling
single-electron tunneling

ASJC Scopus subject areas

General Materials Science
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1002/adma.202101449

FINAL_Revised_manuscript_Ultrafast_Electron_Tunneling_Devices_from_Electric_field_driven_to_Optical_field_driven_0321.pdf
This is the peer reviewed version of the following article: Zhou, S. H., Chen, K., Cole, M. T., Li, Z. J., Li, M., Chen, J., Lienau, C., Li, C., Dai, Q., Ultrafast Electron Tunneling Devices—From Electric-Field Driven to Optical-Field Driven. Adv. Mater. 2021, 33, 2101449. which has been published in final form at https://doi.org/10.1002/adma.202101449. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions. This article may not be enhanced, enriched or otherwise transformed into a derivative work, without express permission from Wiley or by statutory rights under applicable legislation.
Accepted author manuscript, 1.32 MB

Cite this

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abstract = "The search for ever higher frequency information processing has become an area of intense research activity within the micro, nano, and optoelectronics communities. Compared to conventional semiconductor-based diffusive transport electron devices, electron tunneling devices provide significantly faster response times due to near-instantaneous tunneling that occurs at sub-femtosecond timescales. As a result, the enhanced performance of electron tunneling devices is demonstrated, time and again, to reimagine a wide variety of traditional electronic devices with a variety of new “lightwave electronics” emerging, each capable of reducing the electron transport channel transit time down to attosecond timescales. In response to unprecedented rapid progress within this field, here the current state-of-the-art in electron tunneling devices is reviewed, current challenges and opportunities are highlighted, and possible future research directions are identified.",

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note = "Funding Information: The authors acknowledge funding from the National Key R&D Program of China (Grant No. 2016YFA0202000), the National Natural Science Foundation of China (Grant Nos. 51972072, 52072084, 51925203 and 91833303), the Key Research Program of the Chinese Academy of Sciences (Grant No. ZDBS‐SSW‐JSC002), CAS Interdisciplinary Innovation Team (Grant No. JCTD‐2018‐03), the Strategic Priority Research Program of the Chinese Academy of Sciences (Grant Nos. XDB36000000), and the Priority program QUTIF of the Deutsche Forschungsgemeinschaft (SPP1840). ",

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Ultrafast Electron Tunneling Devices—from Electric-field driven to Optical-field driven

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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