Ultrafast all-optical wavelength conversion using an integrated amplifier/DFB laser

M. F C Stephens; R. V. Penty; I. H. White; M. Asghari; M. J. Fice; J. E A Whiteaway

Ultrafast all-optical wavelength conversion using an integrated amplifier/DFB laser

M. F C Stephens, R. V. Penty, I. H. White, M. Asghari, M. J. Fice, J. E A Whiteaway

Vice Chancellor's Office

University of Bristol

Research output: Contribution to journal › Conference article › peer-review

Abstract

Wavelength conversion in the 1550 nm regime was achieved in an integrated semiconductor optical amplifier (SOA)/DFB laser by modulating the output power of the laser with a light beam of a different wavelength externally injected into the SOA section. A 12 dB output extinction ratio was obtained for an average coupled input power of 75 μW with the laser section driven at 65 mA and the amplifier section at 180 mA. The response time achieved was as low as 13 ps with the laser biased at 175 mA even with low extinction ratios. The laser exhibits a similar recovery time allowing potentially very high bit-rate operation.

Original language	English
Pages (from-to)	127-128
Number of pages	2
Journal	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume	11
Publication status	Published - 1 Jan 1997
Event	Proceedings of the 1997 Conference on Lasers and Electro-Optics, CLEO - Baltimore, MD, USA Duration: 18 May 1997 → 23 May 1997

ASJC Scopus subject areas

Control and Systems Engineering
Electrical and Electronic Engineering
Industrial and Manufacturing Engineering

Cite this

@article{ebaf51575bcf4db8994c09c2ef440bde,

title = "Ultrafast all-optical wavelength conversion using an integrated amplifier/DFB laser",

abstract = "Wavelength conversion in the 1550 nm regime was achieved in an integrated semiconductor optical amplifier (SOA)/DFB laser by modulating the output power of the laser with a light beam of a different wavelength externally injected into the SOA section. A 12 dB output extinction ratio was obtained for an average coupled input power of 75 μW with the laser section driven at 65 mA and the amplifier section at 180 mA. The response time achieved was as low as 13 ps with the laser biased at 175 mA even with low extinction ratios. The laser exhibits a similar recovery time allowing potentially very high bit-rate operation.",

author = "Stephens, {M. F C} and Penty, {R. V.} and White, {I. H.} and M. Asghari and Fice, {M. J.} and Whiteaway, {J. E A}",

year = "1997",

month = jan,

day = "1",

language = "English",

volume = "11",

pages = "127--128",

journal = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS",

issn = "1092-8081",

publisher = "IEEE",

note = "Proceedings of the 1997 Conference on Lasers and Electro-Optics, CLEO ; Conference date: 18-05-1997 Through 23-05-1997",

}

TY - JOUR

T1 - Ultrafast all-optical wavelength conversion using an integrated amplifier/DFB laser

AU - Stephens, M. F C

AU - Penty, R. V.

AU - White, I. H.

AU - Asghari, M.

AU - Fice, M. J.

AU - Whiteaway, J. E A

PY - 1997/1/1

Y1 - 1997/1/1

N2 - Wavelength conversion in the 1550 nm regime was achieved in an integrated semiconductor optical amplifier (SOA)/DFB laser by modulating the output power of the laser with a light beam of a different wavelength externally injected into the SOA section. A 12 dB output extinction ratio was obtained for an average coupled input power of 75 μW with the laser section driven at 65 mA and the amplifier section at 180 mA. The response time achieved was as low as 13 ps with the laser biased at 175 mA even with low extinction ratios. The laser exhibits a similar recovery time allowing potentially very high bit-rate operation.

AB - Wavelength conversion in the 1550 nm regime was achieved in an integrated semiconductor optical amplifier (SOA)/DFB laser by modulating the output power of the laser with a light beam of a different wavelength externally injected into the SOA section. A 12 dB output extinction ratio was obtained for an average coupled input power of 75 μW with the laser section driven at 65 mA and the amplifier section at 180 mA. The response time achieved was as low as 13 ps with the laser biased at 175 mA even with low extinction ratios. The laser exhibits a similar recovery time allowing potentially very high bit-rate operation.

UR - http://www.scopus.com/inward/record.url?scp=0030706575&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0030706575

SN - 1092-8081

VL - 11

SP - 127

EP - 128

JO - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

JF - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

T2 - Proceedings of the 1997 Conference on Lasers and Electro-Optics, CLEO

Y2 - 18 May 1997 through 23 May 1997

ER -

Ultrafast all-optical wavelength conversion using an integrated amplifier/DFB laser

Abstract

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this