Two-sections tapered diode lasers for 1 Gbps free-space optical communications with high modulation efficiency

N. Michel, M. Ruiz, M. Calligaro, Y. Robert, M. Lecomte, O. Parillaud, M. Krakowski, I. Esquivias, H. Odriozala, J. M.G. Tijero, C. H. Kwok, R. V. Penty, I. H. White

Research output: Chapter or section in a book/report/conference proceedingChapter in a published conference proceeding

5 Citations (SciVal)

Abstract

High-power (more than 500 mW) and high-speed (more than 1 Gbps) tapered lasers at 1060 nm are required in freespace optical communications and (at lower frequencies of around 100 MHz) display applications for frequency doubling to the green. On a 4 mm-long tapered laser, we have obtained an open eye diagram at 700 Mbps, together with a high extinction ratio of 19 dB, a high optical modulation amplitude of 1.6 W, and a very high modulation efficiency of 19 W/A. On a 3 mm long tapered laser, we have obtained an open eye diagram at 1 Gbps, together with a high extinction ratio of 11 dB, an optical modulation amplitude of 530 mW, and a high modulation efficiency of 13 W/A.

Original languageEnglish
Title of host publicationNovel In-Plane Semiconductor Lasers IX
DOIs
Publication statusPublished - 3 May 2010
EventNovel In-Plane Semiconductor Lasers IX - San Francisco, CA, USA United States
Duration: 25 Jan 201028 Jan 2010

Publication series

NameProceedings of SPIE
Volume7616

Conference

ConferenceNovel In-Plane Semiconductor Lasers IX
Country/TerritoryUSA United States
CitySan Francisco, CA
Period25/01/1028/01/10

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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