Two-photon absorption and self-phase modulation in InGaAsP/InP multi-quantum-well waveguides

H. K. Tsang; R. V. Penty; I. H. White; R. S. Grant; W. Sibbett; J. B D Soole; H. P. Leblanc; N. C. Andreadakis; R. Bhat; M. A. Koza

doi:10.1063/1.349168

Two-photon absorption and self-phase modulation in InGaAsP/InP multi-quantum-well waveguides

H. K. Tsang, R. V. Penty, I. H. White, R. S. Grant, W. Sibbett, J. B D Soole, H. P. Leblanc, N. C. Andreadakis, R. Bhat, M. A. Koza

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Abstract

We report the first measurement of two-photon absorption (TPA) and self-phase modulation in an InGaAsP/InP multi-quantum-well waveguide. The TPA coefficient, β₂, was found to be 60±10 cm/GW at 1.55 μm. Despite operating at 200 nm from the band edge, self-phase modulation as high as 8±2 rad was observed for 30-ps optical pulses at 3.8-W peak input power. A theoretical calculation indicates that this enhanced phase modulation is primarily due to bandfilling in the quantum wells and the free-carrier plasma effect.

Original language	English
Pages (from-to)	3992-3994
Number of pages	3
Journal	Journal of Applied Physics
Volume	70
Issue number	7
DOIs	https://doi.org/10.1063/1.349168
Publication status	Published - 17 Aug 1991

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Two-photon absorption and self-phase modulation in InGaAsP/InP multi-quantum-well waveguides",

abstract = "We report the first measurement of two-photon absorption (TPA) and self-phase modulation in an InGaAsP/InP multi-quantum-well waveguide. The TPA coefficient, β2, was found to be 60±10 cm/GW at 1.55 μm. Despite operating at 200 nm from the band edge, self-phase modulation as high as 8±2 rad was observed for 30-ps optical pulses at 3.8-W peak input power. A theoretical calculation indicates that this enhanced phase modulation is primarily due to bandfilling in the quantum wells and the free-carrier plasma effect.",

author = "Tsang, {H. K.} and Penty, {R. V.} and White, {I. H.} and Grant, {R. S.} and W. Sibbett and Soole, {J. B D} and Leblanc, {H. P.} and Andreadakis, {N. C.} and R. Bhat and Koza, {M. A.}",

year = "1991",

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doi = "10.1063/1.349168",

language = "English",

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journal = "Journal of Applied Physics",

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T1 - Two-photon absorption and self-phase modulation in InGaAsP/InP multi-quantum-well waveguides

AU - Tsang, H. K.

AU - Penty, R. V.

AU - White, I. H.

AU - Grant, R. S.

AU - Sibbett, W.

AU - Soole, J. B D

AU - Leblanc, H. P.

AU - Andreadakis, N. C.

AU - Bhat, R.

AU - Koza, M. A.

PY - 1991/8/17

Y1 - 1991/8/17

N2 - We report the first measurement of two-photon absorption (TPA) and self-phase modulation in an InGaAsP/InP multi-quantum-well waveguide. The TPA coefficient, β2, was found to be 60±10 cm/GW at 1.55 μm. Despite operating at 200 nm from the band edge, self-phase modulation as high as 8±2 rad was observed for 30-ps optical pulses at 3.8-W peak input power. A theoretical calculation indicates that this enhanced phase modulation is primarily due to bandfilling in the quantum wells and the free-carrier plasma effect.

AB - We report the first measurement of two-photon absorption (TPA) and self-phase modulation in an InGaAsP/InP multi-quantum-well waveguide. The TPA coefficient, β2, was found to be 60±10 cm/GW at 1.55 μm. Despite operating at 200 nm from the band edge, self-phase modulation as high as 8±2 rad was observed for 30-ps optical pulses at 3.8-W peak input power. A theoretical calculation indicates that this enhanced phase modulation is primarily due to bandfilling in the quantum wells and the free-carrier plasma effect.

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Two-photon absorption and self-phase modulation in InGaAsP/InP multi-quantum-well waveguides

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