Two-photon absorption and self-phase modulation in InGaAsP/InP multi-quantum-well waveguides

H. K. Tsang, R. V. Penty, I. H. White, R. S. Grant, W. Sibbett, J. B D Soole, H. P. Leblanc, N. C. Andreadakis, R. Bhat, M. A. Koza

Research output: Contribution to journalArticle

Abstract

We report the first measurement of two-photon absorption (TPA) and self-phase modulation in an InGaAsP/InP multi-quantum-well waveguide. The TPA coefficient, β2, was found to be 60±10 cm/GW at 1.55 μm. Despite operating at 200 nm from the band edge, self-phase modulation as high as 8±2 rad was observed for 30-ps optical pulses at 3.8-W peak input power. A theoretical calculation indicates that this enhanced phase modulation is primarily due to bandfilling in the quantum wells and the free-carrier plasma effect.

Original languageEnglish
Pages (from-to)3992-3994
Number of pages3
JournalJournal of Applied Physics
Volume70
Issue number7
DOIs
Publication statusPublished - 17 Aug 1991

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Tsang, H. K., Penty, R. V., White, I. H., Grant, R. S., Sibbett, W., Soole, J. B. D., Leblanc, H. P., Andreadakis, N. C., Bhat, R., & Koza, M. A. (1991). Two-photon absorption and self-phase modulation in InGaAsP/InP multi-quantum-well waveguides. Journal of Applied Physics, 70(7), 3992-3994. https://doi.org/10.1063/1.349168