Two-dimensional nitride ordered alloys: A class of ultrawide bandgap semiconductors

Raagya Arora, Ariel R. Barr, Daniel Bennett, Daniel T. Larson, Michele Pizzochero, Efthimios Kaxiras

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Abstract

Ultrawide bandgap (UWBG) semiconductors are poised to transform power electronics by surpassing the capabilities of established wide bandgap materials, such as GaN and SiC, owing to their capability to operate at higher voltage, frequency, and temperature ranges. While bulk group-III nitrides and their alloys have been extensively studied in the UWBG realm, their two-dimensional counterparts remain largely unexplored. Here, we examine the stability and electronic properties of monolayers of ordered boron-based group-III nitride alloys with general formula BxM1-xN, where M=Al, Ga. On the basis of ab initio calculations we identify a number of energetically and dynamically stable structures. Instrumental to their stability is a previously overlooked out-of-plane displacement (puckering) of atoms, which induces a polar ordering and antiferroelectric ground state. Our findings reveal the energy barrier between metastable ferroelectric states is lowered by successive switching of out-of-plane displacements through an antiferroelectric state.

Original languageEnglish
Article numberL111002
JournalPhysical Review Materials
Volume8
Issue number11
Early online date27 Nov 2024
DOIs
Publication statusPublished - 27 Nov 2024

ASJC Scopus subject areas

  • General Materials Science
  • Physics and Astronomy (miscellaneous)

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