Al2O3 passivated n-doped Si substrates are investigated by second-harmonic generation (SHG) upon applying an external electric field by a corona wire. The observed change in the SHG response upon applying an external electric field is attributed to charge transfer in the semiconductor. Capacitance-voltage measurements are performed to affirm this conclusion. Upon applying a large negative electric field over the structure, a clear alteration in SHG signal is observed, which corresponds to tunneling of holes from the n-doped silicon into the aluminum oxide layer.
|Journal||Applied Physics Letters|
|Publication status||Published - 25 Feb 2013|