Tunneling of holes is observed by second-harmonic generation

M. K. Vanbel, V. V. Afanas'Ev, C. Adelmann, M. Caymax, V. K. Valev, T. Verbiest

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Abstract

Al2O3 passivated n-doped Si substrates are investigated by second-harmonic generation (SHG) upon applying an external electric field by a corona wire. The observed change in the SHG response upon applying an external electric field is attributed to charge transfer in the semiconductor. Capacitance-voltage measurements are performed to affirm this conclusion. Upon applying a large negative electric field over the structure, a clear alteration in SHG signal is observed, which corresponds to tunneling of holes from the n-doped silicon into the aluminum oxide layer.

Original languageEnglish
Article number082104
JournalApplied Physics Letters
Volume102
Issue number8
DOIs
Publication statusPublished - 25 Feb 2013

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    Vanbel, M. K., Afanas'Ev, V. V., Adelmann, C., Caymax, M., Valev, V. K., & Verbiest, T. (2013). Tunneling of holes is observed by second-harmonic generation. Applied Physics Letters, 102(8), [082104]. https://doi.org/10.1063/1.4793578