Tunneling of holes is observed by second-harmonic generation

M. K. Vanbel, V. V. Afanas'Ev, C. Adelmann, M. Caymax, V. K. Valev, T. Verbiest

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Al2O3 passivated n-doped Si substrates are investigated by second-harmonic generation (SHG) upon applying an external electric field by a corona wire. The observed change in the SHG response upon applying an external electric field is attributed to charge transfer in the semiconductor. Capacitance-voltage measurements are performed to affirm this conclusion. Upon applying a large negative electric field over the structure, a clear alteration in SHG signal is observed, which corresponds to tunneling of holes from the n-doped silicon into the aluminum oxide layer.

Original languageEnglish
Article number082104
JournalApplied Physics Letters
Volume102
Issue number8
DOIs
Publication statusPublished - 25 Feb 2013

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harmonic generations
electric fields
electrical measurement
coronas
aluminum oxides
capacitance
charge transfer
wire
silicon

Cite this

Vanbel, M. K., Afanas'Ev, V. V., Adelmann, C., Caymax, M., Valev, V. K., & Verbiest, T. (2013). Tunneling of holes is observed by second-harmonic generation. Applied Physics Letters, 102(8), [082104]. https://doi.org/10.1063/1.4793578

Tunneling of holes is observed by second-harmonic generation. / Vanbel, M. K.; Afanas'Ev, V. V.; Adelmann, C.; Caymax, M.; Valev, V. K.; Verbiest, T.

In: Applied Physics Letters, Vol. 102, No. 8, 082104, 25.02.2013.

Research output: Contribution to journalArticle

Vanbel, MK, Afanas'Ev, VV, Adelmann, C, Caymax, M, Valev, VK & Verbiest, T 2013, 'Tunneling of holes is observed by second-harmonic generation', Applied Physics Letters, vol. 102, no. 8, 082104. https://doi.org/10.1063/1.4793578
Vanbel MK, Afanas'Ev VV, Adelmann C, Caymax M, Valev VK, Verbiest T. Tunneling of holes is observed by second-harmonic generation. Applied Physics Letters. 2013 Feb 25;102(8). 082104. https://doi.org/10.1063/1.4793578
Vanbel, M. K. ; Afanas'Ev, V. V. ; Adelmann, C. ; Caymax, M. ; Valev, V. K. ; Verbiest, T. / Tunneling of holes is observed by second-harmonic generation. In: Applied Physics Letters. 2013 ; Vol. 102, No. 8.
@article{f924299583344a93a659ba59fba156ba,
title = "Tunneling of holes is observed by second-harmonic generation",
abstract = "Al2O3 passivated n-doped Si substrates are investigated by second-harmonic generation (SHG) upon applying an external electric field by a corona wire. The observed change in the SHG response upon applying an external electric field is attributed to charge transfer in the semiconductor. Capacitance-voltage measurements are performed to affirm this conclusion. Upon applying a large negative electric field over the structure, a clear alteration in SHG signal is observed, which corresponds to tunneling of holes from the n-doped silicon into the aluminum oxide layer.",
author = "Vanbel, {M. K.} and Afanas'Ev, {V. V.} and C. Adelmann and M. Caymax and Valev, {V. K.} and T. Verbiest",
year = "2013",
month = "2",
day = "25",
doi = "10.1063/1.4793578",
language = "English",
volume = "102",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "AIP Publishing",
number = "8",

}

TY - JOUR

T1 - Tunneling of holes is observed by second-harmonic generation

AU - Vanbel, M. K.

AU - Afanas'Ev, V. V.

AU - Adelmann, C.

AU - Caymax, M.

AU - Valev, V. K.

AU - Verbiest, T.

PY - 2013/2/25

Y1 - 2013/2/25

N2 - Al2O3 passivated n-doped Si substrates are investigated by second-harmonic generation (SHG) upon applying an external electric field by a corona wire. The observed change in the SHG response upon applying an external electric field is attributed to charge transfer in the semiconductor. Capacitance-voltage measurements are performed to affirm this conclusion. Upon applying a large negative electric field over the structure, a clear alteration in SHG signal is observed, which corresponds to tunneling of holes from the n-doped silicon into the aluminum oxide layer.

AB - Al2O3 passivated n-doped Si substrates are investigated by second-harmonic generation (SHG) upon applying an external electric field by a corona wire. The observed change in the SHG response upon applying an external electric field is attributed to charge transfer in the semiconductor. Capacitance-voltage measurements are performed to affirm this conclusion. Upon applying a large negative electric field over the structure, a clear alteration in SHG signal is observed, which corresponds to tunneling of holes from the n-doped silicon into the aluminum oxide layer.

UR - http://www.scopus.com/inward/record.url?scp=84874847130&partnerID=8YFLogxK

UR - http://dx.doi.org/10.1063/1.4793578

U2 - 10.1063/1.4793578

DO - 10.1063/1.4793578

M3 - Article

VL - 102

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 8

M1 - 082104

ER -