Tunneling of holes is observed by second-harmonic generation

M. K. Vanbel; V. V. Afanas'Ev; C. Adelmann; M. Caymax; V. K. Valev; T. Verbiest

doi:10.1063/1.4793578

Tunneling of holes is observed by second-harmonic generation

M. K. Vanbel, V. V. Afanas'Ev, C. Adelmann, M. Caymax, V. K. Valev, T. Verbiest

Department of Physics

Research output: Contribution to journal › Article › peer-review

6 Citations (SciVal)

Abstract

Al₂O₃ passivated n-doped Si substrates are investigated by second-harmonic generation (SHG) upon applying an external electric field by a corona wire. The observed change in the SHG response upon applying an external electric field is attributed to charge transfer in the semiconductor. Capacitance-voltage measurements are performed to affirm this conclusion. Upon applying a large negative electric field over the structure, a clear alteration in SHG signal is observed, which corresponds to tunneling of holes from the n-doped silicon into the aluminum oxide layer.

Original language	English
Article number	082104
Journal	Applied Physics Letters
Volume	102
Issue number	8
DOIs	https://doi.org/10.1063/1.4793578
Publication status	Published - 25 Feb 2013

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abstract = "Al2O3 passivated n-doped Si substrates are investigated by second-harmonic generation (SHG) upon applying an external electric field by a corona wire. The observed change in the SHG response upon applying an external electric field is attributed to charge transfer in the semiconductor. Capacitance-voltage measurements are performed to affirm this conclusion. Upon applying a large negative electric field over the structure, a clear alteration in SHG signal is observed, which corresponds to tunneling of holes from the n-doped silicon into the aluminum oxide layer.",

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AU - Vanbel, M. K.

AU - Afanas'Ev, V. V.

AU - Adelmann, C.

AU - Caymax, M.

AU - Valev, V. K.

AU - Verbiest, T.

PY - 2013/2/25

Y1 - 2013/2/25

N2 - Al2O3 passivated n-doped Si substrates are investigated by second-harmonic generation (SHG) upon applying an external electric field by a corona wire. The observed change in the SHG response upon applying an external electric field is attributed to charge transfer in the semiconductor. Capacitance-voltage measurements are performed to affirm this conclusion. Upon applying a large negative electric field over the structure, a clear alteration in SHG signal is observed, which corresponds to tunneling of holes from the n-doped silicon into the aluminum oxide layer.

AB - Al2O3 passivated n-doped Si substrates are investigated by second-harmonic generation (SHG) upon applying an external electric field by a corona wire. The observed change in the SHG response upon applying an external electric field is attributed to charge transfer in the semiconductor. Capacitance-voltage measurements are performed to affirm this conclusion. Upon applying a large negative electric field over the structure, a clear alteration in SHG signal is observed, which corresponds to tunneling of holes from the n-doped silicon into the aluminum oxide layer.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Tunneling of holes is observed by second-harmonic generation

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