Tunnel-recombination currents and electroluminescence efficiency in InGaN/GaN LEDs

N I Bochkareva, E A Zhirnov, A A Efremov, Y T Rebane, R I Gorbunov, Y G Shreter

Research output: Contribution to journal › Article › peer-review

30 Citations (SciVal)

ID number: ISI:000229063000020

Cite this

@article{6e1240ea4bae4d9389556e40d4ecb3a1,

title = "Tunnel-recombination currents and electroluminescence efficiency in InGaN/GaN LEDs",

author = "Bochkareva, \{N I\} and Zhirnov, \{E A\} and Efremov, \{A A\} and Rebane, \{Y T\} and Gorbunov, \{R I\} and Shreter, \{Y G\}",

note = "ID number: ISI:000229063000020",

year = "2005",

language = "English",

volume = "39",

pages = "594--599",

journal = "Semiconductors",

issn = "1063-7826",

publisher = "Pleiades Publishing",

number = "5",

}

TY - JOUR

T1 - Tunnel-recombination currents and electroluminescence efficiency in InGaN/GaN LEDs

AU - Bochkareva, N I

AU - Zhirnov, E A

AU - Efremov, A A

AU - Rebane, Y T

AU - Gorbunov, R I

AU - Shreter, Y G

N1 - ID number: ISI:000229063000020

PY - 2005

Y1 - 2005

UR - https://www.scopus.com/pages/publications/18744382553

M3 - Article

SN - 1063-7826

VL - 39

SP - 594

EP - 599

JO - Semiconductors

JF - Semiconductors

IS - 5

ER -