Tunnel-recombination currents and electroluminescence efficiency in InGaN/GaN LEDs

N I Bochkareva, E A Zhirnov, A A Efremov, Y T Rebane, R I Gorbunov, Y G Shreter

Research output: Contribution to journalArticle

25 Citations (Scopus)
Original languageEnglish
Pages (from-to)594-599
Number of pages6
JournalSemiconductors
Volume39
Issue number5
Publication statusPublished - 2005

Cite this

Bochkareva, N. I., Zhirnov, E. A., Efremov, A. A., Rebane, Y. T., Gorbunov, R. I., & Shreter, Y. G. (2005). Tunnel-recombination currents and electroluminescence efficiency in InGaN/GaN LEDs. Semiconductors, 39(5), 594-599.