Tuning of the average p-d exchange in (Ga,Mn)As by modification of the Mn electronic structure

T Hartmann, S Ye, P J Klar, W Heimbrodt, M Lampalzer, W Stolz, T Kurz, A Loidl, H A K von Nidda, D Wolverson, J J Davies, H Overhof

Research output: Contribution to journalArticlepeer-review

14 Citations (SciVal)
Original languageEnglish
Article number233201
JournalPhysical Review B
Issue number23
Publication statusPublished - 2004


  • semiconductor doping
  • manganese compounds
  • III-V semiconductors
  • valence bands
  • ferromagnetic materials
  • gallium arsenide
  • magnetic semiconductors
  • magnetoelectronics
  • paramagnetic materials
  • exchange interactions (electron)
  • antiferromagnetic materials

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