@article{49cc66acebbe4abe838984d744b20d6c,
title = "Tuning of the average p-d exchange in (Ga,Mn)As by modification of the Mn electronic structure",
keywords = "semiconductor doping, manganese compounds, III-V semiconductors, valence bands, ferromagnetic materials, gallium arsenide, magnetic semiconductors, magnetoelectronics, paramagnetic materials, exchange interactions (electron), antiferromagnetic materials",
author = "T Hartmann and S Ye and Klar, {P J} and W Heimbrodt and M Lampalzer and W Stolz and T Kurz and A Loidl and {von Nidda}, {H A K} and D Wolverson and Davies, {J J} and H Overhof",
note = "ID number: ISI:000226112100007",
year = "2004",
doi = "10.1103/PhysRevB.70.233201",
language = "English",
volume = "70",
journal = "Physical Review B",
issn = "1098-0121",
publisher = "American Physical Society",
number = "23",
}