Tuning of the average p-d exchange in (Ga,Mn)As by modification of the Mn electronic structure

T Hartmann, S Ye, P J Klar, W Heimbrodt, M Lampalzer, W Stolz, T Kurz, A Loidl, H A K von Nidda, D Wolverson, J J Davies, H Overhof

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)
Original languageEnglish
Article number233201
JournalPhysical Review B
Volume70
Issue number23
DOIs
Publication statusPublished - 2004

Keywords

  • semiconductor doping
  • manganese compounds
  • III-V semiconductors
  • valence bands
  • ferromagnetic materials
  • gallium arsenide
  • magnetic semiconductors
  • magnetoelectronics
  • paramagnetic materials
  • exchange interactions (electron)
  • antiferromagnetic materials

Cite this