Tuning of the average p-d exchange in (Ga,Mn)As by modification of the Mn electronic structure

T Hartmann, S Ye, P J Klar, W Heimbrodt, M Lampalzer, W Stolz, T Kurz, A Loidl, H A K von Nidda, D Wolverson, J J Davies, H Overhof

Research output: Contribution to journalArticle

14 Citations (Scopus)
Original languageEnglish
Article number233201
JournalPhysical Review B
Volume70
Issue number23
DOIs
Publication statusPublished - 2004

Keywords

  • semiconductor doping
  • manganese compounds
  • III-V semiconductors
  • valence bands
  • ferromagnetic materials
  • gallium arsenide
  • magnetic semiconductors
  • magnetoelectronics
  • paramagnetic materials
  • exchange interactions (electron)
  • antiferromagnetic materials

Cite this

Hartmann, T., Ye, S., Klar, P. J., Heimbrodt, W., Lampalzer, M., Stolz, W., Kurz, T., Loidl, A., von Nidda, H. A. K., Wolverson, D., Davies, J. J., & Overhof, H. (2004). Tuning of the average p-d exchange in (Ga,Mn)As by modification of the Mn electronic structure. Physical Review B, 70(23), [233201]. https://doi.org/10.1103/PhysRevB.70.233201