Abstract
Organic non-volatile resistive bistable diodes based on phase-separated blends of ferroelectric and semiconducting polymers are fabricated. The polarization field of the ferroelectric modulates the injection barrier at the semiconductor-electrode contact and, hence, the resistance of the comprising diodes. Comparison between the on- and off-current of the switching diodes, with the current measured for semiconductor-only diodes reveals that the switching occurs between bulk-limited, i.e., space-chargelimited, and injection-limited current transport. By deliberately varying the HOMO energy of the semiconductor and the work-function of the metal electrode, it is demonstrated that injection barriers up to 1.6eV can be surmounted by the ferroelectric polarization yielding on/off current modulations of more than five orders of magnitude. The exponential dependence of the current modulation with a slope of 0.25 eV/decade is rationalized by the magnitude of the injection barrier.
Original language | English |
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Pages (from-to) | 3173-3178 |
Number of pages | 6 |
Journal | Advanced Functional Materials |
Volume | 19 |
Issue number | 19 |
DOIs | |
Publication status | Published - 9 Oct 2009 |
ASJC Scopus subject areas
- General Chemistry
- General Materials Science
- Condensed Matter Physics