Tunable injection barrier in organic resistive switches based on phase-separated ferroelectric-semiconductor blends

Kamal Asadi, Tom G. De Boer, Paul W.M. Blom, Dago M. De Leeuw

Research output: Contribution to journalArticle

67 Citations (Scopus)

Abstract

Organic non-volatile resistive bistable diodes based on phase-separated blends of ferroelectric and semiconducting polymers are fabricated. The polarization field of the ferroelectric modulates the injection barrier at the semiconductor-electrode contact and, hence, the resistance of the comprising diodes. Comparison between the on- and off-current of the switching diodes, with the current measured for semiconductor-only diodes reveals that the switching occurs between bulk-limited, i.e., space-chargelimited, and injection-limited current transport. By deliberately varying the HOMO energy of the semiconductor and the work-function of the metal electrode, it is demonstrated that injection barriers up to 1.6eV can be surmounted by the ferroelectric polarization yielding on/off current modulations of more than five orders of magnitude. The exponential dependence of the current modulation with a slope of 0.25 eV/decade is rationalized by the magnitude of the injection barrier.

Original languageEnglish
Pages (from-to)3173-3178
Number of pages6
JournalAdvanced Functional Materials
Volume19
Issue number19
DOIs
Publication statusPublished - 9 Oct 2009

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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