Trap properties of asymmetrical double-gate polysilicon thin-film transistors with low frequency noise in terms of the grain boundaries direction

Nikolaos Hastas; Andreas Tsormpatzoglou; Ilias Pappas; Dimitrios N. Kouvatsos; Despina C. Moschou; Apostolos T. Voutsas; Charalabos A. Dimitriadis

doi:10.1109/MIEL.2012.6222869

Trap properties of asymmetrical double-gate polysilicon thin-film transistors with low frequency noise in terms of the grain boundaries direction

Nikolaos Hastas, Andreas Tsormpatzoglou, Ilias Pappas, Dimitrios N. Kouvatsos, Despina C. Moschou, Apostolos T. Voutsas, Charalabos A. Dimitriadis

Department of Electronic & Electrical Engineering

Research output: Chapter or section in a book/report/conference proceeding › Chapter in a published conference proceeding

Abstract

Low frequency drain current fluctuation noise was measured in two types of polysilicon double gate thin film transistors fabricated by sequential lateral solidification technique keeping the back gate grounded. In X-oriented devices, the grain boundaries are parallel to the drain current flow, while in Y-oriented devices the grain boundaries are lying perpendicular to the drain current flow. The noise spectra consist of generation-recombination (g-r) and flicker noise components. In X-oriented TFTs the g-r centers are related to bulk traps located in the grains, whereas in Y-oriented TFTs the g-r centers correspond to grain boundary traps in addition to bulk traps in the grains.

Original language	English
Title of host publication	Proceedings of the 28th International Conference on Microelectronics (MIEL), 2012
Publisher	IEEE
Pages	339-342
Number of pages	4
ISBN (Print)	9781467302371
DOIs	https://doi.org/10.1109/MIEL.2012.6222869
Publication status	Published - 2012
Event	2012 28th International Conference on Microelectronics, MIEL 2012 - Nis, Serbia Duration: 13 May 2012 → 16 May 2012

Conference

Conference	2012 28th International Conference on Microelectronics, MIEL 2012
Country/Territory	Serbia
City	Nis
Period	13/05/12 → 16/05/12

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10.1109/MIEL.2012.6222869

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Hastas, N., Tsormpatzoglou, A., Pappas, I., Kouvatsos, D. N., Moschou, D. C., Voutsas, A. T., & Dimitriadis, C. A. (2012). Trap properties of asymmetrical double-gate polysilicon thin-film transistors with low frequency noise in terms of the grain boundaries direction. In Proceedings of the 28th International Conference on Microelectronics (MIEL), 2012 (pp. 339-342). Article 6222869 IEEE. https://doi.org/10.1109/MIEL.2012.6222869

Trap properties of asymmetrical double-gate polysilicon thin-film transistors with low frequency noise in terms of the grain boundaries direction. / Hastas, Nikolaos; Tsormpatzoglou, Andreas; Pappas, Ilias et al.
Proceedings of the 28th International Conference on Microelectronics (MIEL), 2012. IEEE, 2012. p. 339-342 6222869.

Research output: Chapter or section in a book/report/conference proceeding › Chapter in a published conference proceeding

Hastas, N, Tsormpatzoglou, A, Pappas, I, Kouvatsos, DN, Moschou, DC, Voutsas, AT & Dimitriadis, CA 2012, Trap properties of asymmetrical double-gate polysilicon thin-film transistors with low frequency noise in terms of the grain boundaries direction. in Proceedings of the 28th International Conference on Microelectronics (MIEL), 2012., 6222869, IEEE, pp. 339-342, 2012 28th International Conference on Microelectronics, MIEL 2012, Nis, Serbia, 13/05/12. https://doi.org/10.1109/MIEL.2012.6222869

Hastas N, Tsormpatzoglou A, Pappas I, Kouvatsos DN, Moschou DC, Voutsas AT et al. Trap properties of asymmetrical double-gate polysilicon thin-film transistors with low frequency noise in terms of the grain boundaries direction. In Proceedings of the 28th International Conference on Microelectronics (MIEL), 2012. IEEE. 2012. p. 339-342. 6222869 doi: 10.1109/MIEL.2012.6222869

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title = "Trap properties of asymmetrical double-gate polysilicon thin-film transistors with low frequency noise in terms of the grain boundaries direction",

abstract = "Low frequency drain current fluctuation noise was measured in two types of polysilicon double gate thin film transistors fabricated by sequential lateral solidification technique keeping the back gate grounded. In X-oriented devices, the grain boundaries are parallel to the drain current flow, while in Y-oriented devices the grain boundaries are lying perpendicular to the drain current flow. The noise spectra consist of generation-recombination (g-r) and flicker noise components. In X-oriented TFTs the g-r centers are related to bulk traps located in the grains, whereas in Y-oriented TFTs the g-r centers correspond to grain boundary traps in addition to bulk traps in the grains. ",

author = "Nikolaos Hastas and Andreas Tsormpatzoglou and Ilias Pappas and Kouvatsos, {Dimitrios N.} and Moschou, {Despina C.} and Voutsas, {Apostolos T.} and Dimitriadis, {Charalabos A.}",

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doi = "10.1109/MIEL.2012.6222869",

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AB - Low frequency drain current fluctuation noise was measured in two types of polysilicon double gate thin film transistors fabricated by sequential lateral solidification technique keeping the back gate grounded. In X-oriented devices, the grain boundaries are parallel to the drain current flow, while in Y-oriented devices the grain boundaries are lying perpendicular to the drain current flow. The noise spectra consist of generation-recombination (g-r) and flicker noise components. In X-oriented TFTs the g-r centers are related to bulk traps located in the grains, whereas in Y-oriented TFTs the g-r centers correspond to grain boundary traps in addition to bulk traps in the grains.

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Trap properties of asymmetrical double-gate polysilicon thin-film transistors with low frequency noise in terms of the grain boundaries direction

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