Low frequency drain current fluctuation noise was measured in two types of polysilicon double gate thin film transistors fabricated by sequential lateral solidification technique keeping the back gate grounded. In X-oriented devices, the grain boundaries are parallel to the drain current flow, while in Y-oriented devices the grain boundaries are lying perpendicular to the drain current flow. The noise spectra consist of generation-recombination (g-r) and flicker noise components. In X-oriented TFTs the g-r centers are related to bulk traps located in the grains, whereas in Y-oriented TFTs the g-r centers correspond to grain boundary traps in addition to bulk traps in the grains.
|Title of host publication||Proceedings of the 28th International Conference on Microelectronics (MIEL), 2012|
|Number of pages||4|
|Publication status||Published - 2012|
|Event||2012 28th International Conference on Microelectronics, MIEL 2012 - Nis, Serbia|
Duration: 13 May 2012 → 16 May 2012
|Conference||2012 28th International Conference on Microelectronics, MIEL 2012|
|Period||13/05/12 → 16/05/12|