Trap properties of asymmetrical double-gate polysilicon thin-film transistors with low frequency noise in terms of the grain boundaries direction

Nikolaos Hastas, Andreas Tsormpatzoglou, Ilias Pappas, Dimitrios N. Kouvatsos, Despina C. Moschou, Apostolos T. Voutsas, Charalabos A. Dimitriadis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Low frequency drain current fluctuation noise was measured in two types of polysilicon double gate thin film transistors fabricated by sequential lateral solidification technique keeping the back gate grounded. In X-oriented devices, the grain boundaries are parallel to the drain current flow, while in Y-oriented devices the grain boundaries are lying perpendicular to the drain current flow. The noise spectra consist of generation-recombination (g-r) and flicker noise components. In X-oriented TFTs the g-r centers are related to bulk traps located in the grains, whereas in Y-oriented TFTs the g-r centers correspond to grain boundary traps in addition to bulk traps in the grains.

Original languageEnglish
Title of host publicationProceedings of the 28th International Conference on Microelectronics (MIEL), 2012
PublisherIEEE
Pages339-342
Number of pages4
ISBN (Print)9781467302371
DOIs
Publication statusPublished - 2012
Event2012 28th International Conference on Microelectronics, MIEL 2012 - Nis, Serbia
Duration: 13 May 201216 May 2012

Conference

Conference2012 28th International Conference on Microelectronics, MIEL 2012
CountrySerbia
CityNis
Period13/05/1216/05/12

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transistors
grain boundaries
traps
low frequencies
thin films
flicker
noise spectra
solidification

Cite this

Hastas, N., Tsormpatzoglou, A., Pappas, I., Kouvatsos, D. N., Moschou, D. C., Voutsas, A. T., & Dimitriadis, C. A. (2012). Trap properties of asymmetrical double-gate polysilicon thin-film transistors with low frequency noise in terms of the grain boundaries direction. In Proceedings of the 28th International Conference on Microelectronics (MIEL), 2012 (pp. 339-342). [6222869] IEEE. https://doi.org/10.1109/MIEL.2012.6222869

Trap properties of asymmetrical double-gate polysilicon thin-film transistors with low frequency noise in terms of the grain boundaries direction. / Hastas, Nikolaos; Tsormpatzoglou, Andreas; Pappas, Ilias; Kouvatsos, Dimitrios N.; Moschou, Despina C.; Voutsas, Apostolos T.; Dimitriadis, Charalabos A.

Proceedings of the 28th International Conference on Microelectronics (MIEL), 2012. IEEE, 2012. p. 339-342 6222869.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hastas, N, Tsormpatzoglou, A, Pappas, I, Kouvatsos, DN, Moschou, DC, Voutsas, AT & Dimitriadis, CA 2012, Trap properties of asymmetrical double-gate polysilicon thin-film transistors with low frequency noise in terms of the grain boundaries direction. in Proceedings of the 28th International Conference on Microelectronics (MIEL), 2012., 6222869, IEEE, pp. 339-342, 2012 28th International Conference on Microelectronics, MIEL 2012, Nis, Serbia, 13/05/12. https://doi.org/10.1109/MIEL.2012.6222869
Hastas N, Tsormpatzoglou A, Pappas I, Kouvatsos DN, Moschou DC, Voutsas AT et al. Trap properties of asymmetrical double-gate polysilicon thin-film transistors with low frequency noise in terms of the grain boundaries direction. In Proceedings of the 28th International Conference on Microelectronics (MIEL), 2012. IEEE. 2012. p. 339-342. 6222869 https://doi.org/10.1109/MIEL.2012.6222869
Hastas, Nikolaos ; Tsormpatzoglou, Andreas ; Pappas, Ilias ; Kouvatsos, Dimitrios N. ; Moschou, Despina C. ; Voutsas, Apostolos T. ; Dimitriadis, Charalabos A. / Trap properties of asymmetrical double-gate polysilicon thin-film transistors with low frequency noise in terms of the grain boundaries direction. Proceedings of the 28th International Conference on Microelectronics (MIEL), 2012. IEEE, 2012. pp. 339-342
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abstract = "Low frequency drain current fluctuation noise was measured in two types of polysilicon double gate thin film transistors fabricated by sequential lateral solidification technique keeping the back gate grounded. In X-oriented devices, the grain boundaries are parallel to the drain current flow, while in Y-oriented devices the grain boundaries are lying perpendicular to the drain current flow. The noise spectra consist of generation-recombination (g-r) and flicker noise components. In X-oriented TFTs the g-r centers are related to bulk traps located in the grains, whereas in Y-oriented TFTs the g-r centers correspond to grain boundary traps in addition to bulk traps in the grains.",
author = "Nikolaos Hastas and Andreas Tsormpatzoglou and Ilias Pappas and Kouvatsos, {Dimitrios N.} and Moschou, {Despina C.} and Voutsas, {Apostolos T.} and Dimitriadis, {Charalabos A.}",
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