### Abstract

Original language | English |
---|---|

Pages (from-to) | 263-269 |

Number of pages | 7 |

Journal | Semiconductor Science and Technology |

Volume | 19 |

Issue number | 2 |

Publication status | Published - 2004 |

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### Cite this

*Semiconductor Science and Technology*,

*19*(2), 263-269.

**Transition from two-dimensional to three-dimensional electroabsorption in extremely shallow quantum wells.** / Chen, X; Allsopp, D W E; Batty, W.

Research output: Contribution to journal › Article

*Semiconductor Science and Technology*, vol. 19, no. 2, pp. 263-269.

}

TY - JOUR

T1 - Transition from two-dimensional to three-dimensional electroabsorption in extremely shallow quantum wells

AU - Chen, X

AU - Allsopp, D W E

AU - Batty, W

N1 - ID number: ISI:000189377900025

PY - 2004

Y1 - 2004

N2 - Calculations of electroabsorption in extremely shallow quantum wells are performed, accurately incorporating mixing of different subband pairs due to the Coulombic interaction. As the AlAs mole fraction is varied in the barriers of a 100 A wide AlxGa1-xAs/GaAs square quantum well, a transition from red to blueshift of the absorption edge with applied electric field occurs at x similar to 0.003. In a 20 Angstrom wide square well, which more strongly confines the excitons, the redshift of the absorption edge is still observable at low electric field strength in the simulated absorption spectra, even for AlAs mole fractions as low as similar to0.001. However, on increasing the strength of the applied electric field the blueshift becomes apparent. It is demonstrated that inclusion of Coulombic coupling between different subband pairs, particularly between confined states and quasi-continuum states, is essential for a correct prediction of the absorption edge behaviour in extremely shallow quantum wells.

AB - Calculations of electroabsorption in extremely shallow quantum wells are performed, accurately incorporating mixing of different subband pairs due to the Coulombic interaction. As the AlAs mole fraction is varied in the barriers of a 100 A wide AlxGa1-xAs/GaAs square quantum well, a transition from red to blueshift of the absorption edge with applied electric field occurs at x similar to 0.003. In a 20 Angstrom wide square well, which more strongly confines the excitons, the redshift of the absorption edge is still observable at low electric field strength in the simulated absorption spectra, even for AlAs mole fractions as low as similar to0.001. However, on increasing the strength of the applied electric field the blueshift becomes apparent. It is demonstrated that inclusion of Coulombic coupling between different subband pairs, particularly between confined states and quasi-continuum states, is essential for a correct prediction of the absorption edge behaviour in extremely shallow quantum wells.

M3 - Article

VL - 19

SP - 263

EP - 269

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 2

ER -