Top-down fabrication of GaN nano-laser arrays by displacement Talbot lithography and selective area sublimation

Benjamin Damilano; Pierre Marie Coulon; Stéphane Vézian; Virginie Brändli; Jean Yves Duboz; Jean Massies; Philip A. Shields

doi:10.7567/1882-0786/ab0d32

Top-down fabrication of GaN nano-laser arrays by displacement Talbot lithography and selective area sublimation

Benjamin Damilano, Pierre Marie Coulon, Stéphane Vézian, Virginie Brändli, Jean Yves Duboz, Jean Massies, Philip A. Shields

Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications

Research output: Contribution to journal › Article › peer-review

21 Citations (SciVal)

Abstract

We show that a 4 μm thick GaN layer grown by metal-organic vapour phase epitaxy can be transformed into a well-organized array of GaN nanowires (NWs) using displacement Talbot lithography and selective area sublimation. The optical quality of the GaN NWs obtained by this method is attested by their room temperature photoluminescence and the observation of lasing under optical pumping with a minimum excitation power density threshold of 2.4 MW cm ^-2 .

Original language	English
Article number	045007
Journal	Applied Physics Express
Volume	12
Issue number	4
Early online date	6 Mar 2019
DOIs	https://doi.org/10.7567/1882-0786/ab0d32
Publication status	Published - 27 Mar 2019

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

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10.7567/1882-0786/ab0d32Licence: CC BY

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abstract = " We show that a 4 μm thick GaN layer grown by metal-organic vapour phase epitaxy can be transformed into a well-organized array of GaN nanowires (NWs) using displacement Talbot lithography and selective area sublimation. The optical quality of the GaN NWs obtained by this method is attested by their room temperature photoluminescence and the observation of lasing under optical pumping with a minimum excitation power density threshold of 2.4 MW cm -2 . ",

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AU - Damilano, Benjamin

AU - Coulon, Pierre Marie

AU - Vézian, Stéphane

AU - Brändli, Virginie

AU - Duboz, Jean Yves

AU - Massies, Jean

AU - Shields, Philip A.

PY - 2019/3/27

Y1 - 2019/3/27

N2 - We show that a 4 μm thick GaN layer grown by metal-organic vapour phase epitaxy can be transformed into a well-organized array of GaN nanowires (NWs) using displacement Talbot lithography and selective area sublimation. The optical quality of the GaN NWs obtained by this method is attested by their room temperature photoluminescence and the observation of lasing under optical pumping with a minimum excitation power density threshold of 2.4 MW cm -2 .

AB - We show that a 4 μm thick GaN layer grown by metal-organic vapour phase epitaxy can be transformed into a well-organized array of GaN nanowires (NWs) using displacement Talbot lithography and selective area sublimation. The optical quality of the GaN NWs obtained by this method is attested by their room temperature photoluminescence and the observation of lasing under optical pumping with a minimum excitation power density threshold of 2.4 MW cm -2 .

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Top-down fabrication of GaN nano-laser arrays by displacement Talbot lithography and selective area sublimation

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Manufacturing of Nano-Engineered III-N Semiconductors

Manufacturing of Nano-Engineered III-N Semiconductors - Equipment

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Top-down fabrication of GaN nano-laser arrays by displacement Talbot lithography and selective area sublimation

Abstract

ASJC Scopus subject areas

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Manufacturing of Nano-Engineered III-N Semiconductors

Manufacturing of Nano-Engineered III-N Semiconductors - Equipment

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