Time resolved EBIC study of InAlN/GaN HFETs

A. Šatka, J. Priesol, M. Bernát, D. Donoval, J. Kováč, D. W E Allsopp, J. Kuzmík

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Transient phenomena in depletion-mode Gallium Nitride (GaN) Heterostructure Field-Effect Transistor (HFET) structures biased to various operation points corresponding to their real applications has been studied using Time-Resolved Electron Beam Induced Current (TREBIC) method. It has been found, that the amplitude and shape of the transient response depends on the gate voltage VGs and position of the electron beam in the active region of the HFET. Inhomogeneous lateral build-up and recovery of electric field has been observed at the gate in the drain access region of the HFETs, attributed to inhomogeneous distribution of the trapping centres in proximity of the Schottky gate electrode.

Original languageEnglish
Title of host publicationConference Proceedings - 10th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2014
PublisherIEEE
Pages1-4
Number of pages4
ISBN (Print)9781479954742
DOIs
Publication statusPublished - 2014
Event10th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2014 - Smolenice, UK United Kingdom
Duration: 20 Oct 201422 Oct 2014

Conference

Conference10th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2014
CountryUK United Kingdom
CitySmolenice
Period20/10/1422/10/14

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    Šatka, A., Priesol, J., Bernát, M., Donoval, D., Kováč, J., Allsopp, D. W. E., & Kuzmík, J. (2014). Time resolved EBIC study of InAlN/GaN HFETs. In Conference Proceedings - 10th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2014 (pp. 1-4). IEEE. https://doi.org/10.1109/ASDAM.2014.6998666