Time resolved EBIC study of InAlN/GaN HFETs

A. Šatka; J. Priesol; M. Bernát; D. Donoval; J. Kováč; D. W E Allsopp; J. Kuzmík

doi:10.1109/ASDAM.2014.6998666

Time resolved EBIC study of InAlN/GaN HFETs

A. Šatka, J. Priesol, M. Bernát, D. Donoval, J. Kováč, D. W E Allsopp, J. Kuzmík

Research output: Chapter or section in a book/report/conference proceeding › Chapter in a published conference proceeding

Abstract

Transient phenomena in depletion-mode Gallium Nitride (GaN) Heterostructure Field-Effect Transistor (HFET) structures biased to various operation points corresponding to their real applications has been studied using Time-Resolved Electron Beam Induced Current (TREBIC) method. It has been found, that the amplitude and shape of the transient response depends on the gate voltage VGs and position of the electron beam in the active region of the HFET. Inhomogeneous lateral build-up and recovery of electric field has been observed at the gate in the drain access region of the HFETs, attributed to inhomogeneous distribution of the trapping centres in proximity of the Schottky gate electrode.

Original language	English
Title of host publication	Conference Proceedings - 10th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2014
Publisher	IEEE
Pages	1-4
Number of pages	4
ISBN (Print)	9781479954742
DOIs	https://doi.org/10.1109/ASDAM.2014.6998666
Publication status	Published - 2014
Event	10th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2014 - Smolenice, UK United Kingdom Duration: 20 Oct 2014 → 22 Oct 2014

Conference

Conference	10th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2014
Country/Territory	UK United Kingdom
City	Smolenice
Period	20/10/14 → 22/10/14

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10.1109/ASDAM.2014.6998666

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Šatka, A, Priesol, J, Bernát, M, Donoval, D, Kováč, J, Allsopp, DWE & Kuzmík, J 2014, Time resolved EBIC study of InAlN/GaN HFETs. in Conference Proceedings - 10th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2014. IEEE, pp. 1-4, 10th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2014, Smolenice, UK United Kingdom, 20/10/14. https://doi.org/10.1109/ASDAM.2014.6998666

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title = "Time resolved EBIC study of InAlN/GaN HFETs",

abstract = "Transient phenomena in depletion-mode Gallium Nitride (GaN) Heterostructure Field-Effect Transistor (HFET) structures biased to various operation points corresponding to their real applications has been studied using Time-Resolved Electron Beam Induced Current (TREBIC) method. It has been found, that the amplitude and shape of the transient response depends on the gate voltage VGs and position of the electron beam in the active region of the HFET. Inhomogeneous lateral build-up and recovery of electric field has been observed at the gate in the drain access region of the HFETs, attributed to inhomogeneous distribution of the trapping centres in proximity of the Schottky gate electrode.",

author = "A. {\v S}atka and J. Priesol and M. Bern{\'a}t and D. Donoval and J. Kov{\'a}{\v c} and Allsopp, {D. W E} and J. Kuzm{\'i}k",

year = "2014",

doi = "10.1109/ASDAM.2014.6998666",

language = "English",

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pages = "1--4",

booktitle = "Conference Proceedings - 10th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2014",

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note = "10th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2014 ; Conference date: 20-10-2014 Through 22-10-2014",

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T1 - Time resolved EBIC study of InAlN/GaN HFETs

AU - Šatka, A.

AU - Priesol, J.

AU - Bernát, M.

AU - Donoval, D.

AU - Kováč, J.

AU - Allsopp, D. W E

AU - Kuzmík, J.

PY - 2014

Y1 - 2014

N2 - Transient phenomena in depletion-mode Gallium Nitride (GaN) Heterostructure Field-Effect Transistor (HFET) structures biased to various operation points corresponding to their real applications has been studied using Time-Resolved Electron Beam Induced Current (TREBIC) method. It has been found, that the amplitude and shape of the transient response depends on the gate voltage VGs and position of the electron beam in the active region of the HFET. Inhomogeneous lateral build-up and recovery of electric field has been observed at the gate in the drain access region of the HFETs, attributed to inhomogeneous distribution of the trapping centres in proximity of the Schottky gate electrode.

AB - Transient phenomena in depletion-mode Gallium Nitride (GaN) Heterostructure Field-Effect Transistor (HFET) structures biased to various operation points corresponding to their real applications has been studied using Time-Resolved Electron Beam Induced Current (TREBIC) method. It has been found, that the amplitude and shape of the transient response depends on the gate voltage VGs and position of the electron beam in the active region of the HFET. Inhomogeneous lateral build-up and recovery of electric field has been observed at the gate in the drain access region of the HFETs, attributed to inhomogeneous distribution of the trapping centres in proximity of the Schottky gate electrode.

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M3 - Chapter in a published conference proceeding

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SN - 9781479954742

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BT - Conference Proceedings - 10th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2014

PB - IEEE

T2 - 10th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2014

Y2 - 20 October 2014 through 22 October 2014

ER -

Time resolved EBIC study of InAlN/GaN HFETs

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