Threshold current reduction in InGaN MQW laser diode with λ/4 air/semiconductor Bragg reflectors

C. Marinelli, L. J. Sargent, A. Wonfor, J. M. Rorison, R. V. Penty, I. H. White, P. J. Heard, G. Hasnain, R. Schneider

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

An etching technique which allows the threshold characteristics of a Fabry-Perot InGaN multi-quantum well (MQW) laser diode to be improved by introducing two 5λ/4 air/nitride Bragg reflectors is demonstrated. The laser diodes used are grown on sapphire substrate and have standard ridge structures. The mesa structures and laser facets are defined by reactive ion etching.

Original languageEnglish
Pages (from-to)1706-1707
Number of pages2
JournalElectronics Letters
Volume36
Issue number20
DOIs
Publication statusPublished - 28 Sep 2000

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Marinelli, C., Sargent, L. J., Wonfor, A., Rorison, J. M., Penty, R. V., White, I. H., ... Schneider, R. (2000). Threshold current reduction in InGaN MQW laser diode with λ/4 air/semiconductor Bragg reflectors. Electronics Letters, 36(20), 1706-1707. https://doi.org/10.1049/el:20001230