An etching technique which allows the threshold characteristics of a Fabry-Perot InGaN multi-quantum well (MQW) laser diode to be improved by introducing two 5λ/4 air/nitride Bragg reflectors is demonstrated. The laser diodes used are grown on sapphire substrate and have standard ridge structures. The mesa structures and laser facets are defined by reactive ion etching.
ASJC Scopus subject areas
- Electrical and Electronic Engineering