Threshold current reduction in InGaN MQW laser diode with λ/4 air/semiconductor Bragg reflectors

C. Marinelli; L. J. Sargent; A. Wonfor; J. M. Rorison; R. V. Penty; I. H. White; P. J. Heard; G. Hasnain; R. Schneider

doi:10.1049/el:20001230

Threshold current reduction in InGaN MQW laser diode with λ/4 air/semiconductor Bragg reflectors

C. Marinelli, L. J. Sargent, A. Wonfor, J. M. Rorison, R. V. Penty, I. H. White, P. J. Heard, G. Hasnain, R. Schneider

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16 Citations (SciVal)

Abstract

An etching technique which allows the threshold characteristics of a Fabry-Perot InGaN multi-quantum well (MQW) laser diode to be improved by introducing two 5λ/4 air/nitride Bragg reflectors is demonstrated. The laser diodes used are grown on sapphire substrate and have standard ridge structures. The mesa structures and laser facets are defined by reactive ion etching.

Original language	English
Pages (from-to)	1706-1707
Number of pages	2
Journal	Electronics Letters
Volume	36
Issue number	20
DOIs	https://doi.org/10.1049/el:20001230
Publication status	Published - 28 Sept 2000

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:20001230

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abstract = "An etching technique which allows the threshold characteristics of a Fabry-Perot InGaN multi-quantum well (MQW) laser diode to be improved by introducing two 5λ/4 air/nitride Bragg reflectors is demonstrated. The laser diodes used are grown on sapphire substrate and have standard ridge structures. The mesa structures and laser facets are defined by reactive ion etching.",

author = "C. Marinelli and Sargent, {L. J.} and A. Wonfor and Rorison, {J. M.} and Penty, {R. V.} and White, {I. H.} and Heard, {P. J.} and G. Hasnain and R. Schneider",

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T1 - Threshold current reduction in InGaN MQW laser diode with λ/4 air/semiconductor Bragg reflectors

AU - Marinelli, C.

AU - Sargent, L. J.

AU - Wonfor, A.

AU - Rorison, J. M.

AU - Penty, R. V.

AU - White, I. H.

AU - Heard, P. J.

AU - Hasnain, G.

AU - Schneider, R.

PY - 2000/9/28

Y1 - 2000/9/28

N2 - An etching technique which allows the threshold characteristics of a Fabry-Perot InGaN multi-quantum well (MQW) laser diode to be improved by introducing two 5λ/4 air/nitride Bragg reflectors is demonstrated. The laser diodes used are grown on sapphire substrate and have standard ridge structures. The mesa structures and laser facets are defined by reactive ion etching.

AB - An etching technique which allows the threshold characteristics of a Fabry-Perot InGaN multi-quantum well (MQW) laser diode to be improved by introducing two 5λ/4 air/nitride Bragg reflectors is demonstrated. The laser diodes used are grown on sapphire substrate and have standard ridge structures. The mesa structures and laser facets are defined by reactive ion etching.

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U2 - 10.1049/el:20001230

DO - 10.1049/el:20001230

M3 - Article

AN - SCOPUS:0034275055

SN - 0013-5194

VL - 36

SP - 1706

EP - 1707

JO - Electronics Letters

JF - Electronics Letters

IS - 20

ER -

Threshold current reduction in InGaN MQW laser diode with λ/4 air/semiconductor Bragg reflectors

Abstract

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