Three band-gap QW intermixing in InP/InGaAs/InGaAsP system for monolithically integrated optical switch

Y. H. Qian; M. Owen; M. L. Ke; B. C. Qiu; S. D. McDougall; O. P. Kowalski; C. J. Hamilton; A. C. Bryce; J. H. Marsh; C. D.W. Wilkinson; R. V. Penty; I. H. White; S. Perrin; D. Rogers; M. Robertson

Three band-gap QW intermixing in InP/InGaAs/InGaAsP system for monolithically integrated optical switch

Y. H. Qian, M. Owen, M. L. Ke, B. C. Qiu, S. D. McDougall, O. P. Kowalski, C. J. Hamilton, A. C. Bryce, J. H. Marsh, C. D.W. Wilkinson, R. V. Penty, I. H. White, S. Perrin, D. Rogers, M. Robertson

University of Glasgow

Research output: Contribution to journal › Conference article › peer-review

6 Citations (SciVal)

Abstract

Quantum well intermixing is a key technique for photonic integration. The intermixing of InP/InGaAs/InGaAsP material involving the deposition of a layer of sputtered SiO ₂ on the semiconductor surface, followed by thermal annealing has allowed good control of the intermixing process and has been used to fabricate extended cavity lasers. This will be used for optimization of the performance of optical switches consisting of passive components, modulators and amplifiers.

Original language	English
Pages (from-to)	194-195
Number of pages	2
Journal	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume	2
Publication status	Published - 1 Dec 1998
Event	Proceedings of the 1998 11th Annual Meeting IEEE Lasers and Electro-Optics Society, LEOS. Part 2 (of 2) - Orlando, FL, USA Duration: 1 Dec 1998 → 4 Dec 1998

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

Qian, Y. H., Owen, M., Ke, M. L., Qiu, B. C., McDougall, S. D., Kowalski, O. P., Hamilton, C. J., Bryce, A. C., Marsh, J. H., Wilkinson, C. D. W., Penty, R. V., White, I. H., Perrin, S., Rogers, D., & Robertson, M. (1998). Three band-gap QW intermixing in InP/InGaAs/InGaAsP system for monolithically integrated optical switch. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, 2, 194-195.

Qian, YH, Owen, M, Ke, ML, Qiu, BC, McDougall, SD, Kowalski, OP, Hamilton, CJ, Bryce, AC, Marsh, JH, Wilkinson, CDW, Penty, RV, White, IH, Perrin, S, Rogers, D & Robertson, M 1998, 'Three band-gap QW intermixing in InP/InGaAs/InGaAsP system for monolithically integrated optical switch', Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, vol. 2, pp. 194-195.

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title = "Three band-gap QW intermixing in InP/InGaAs/InGaAsP system for monolithically integrated optical switch",

abstract = " Quantum well intermixing is a key technique for photonic integration. The intermixing of InP/InGaAs/InGaAsP material involving the deposition of a layer of sputtered SiO 2 on the semiconductor surface, followed by thermal annealing has allowed good control of the intermixing process and has been used to fabricate extended cavity lasers. This will be used for optimization of the performance of optical switches consisting of passive components, modulators and amplifiers. ",

author = "Qian, {Y. H.} and M. Owen and Ke, {M. L.} and Qiu, {B. C.} and McDougall, {S. D.} and Kowalski, {O. P.} and Hamilton, {C. J.} and Bryce, {A. C.} and Marsh, {J. H.} and Wilkinson, {C. D.W.} and Penty, {R. V.} and White, {I. H.} and S. Perrin and D. Rogers and M. Robertson",

year = "1998",

month = dec,

day = "1",

language = "English",

volume = "2",

pages = "194--195",

journal = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS",

issn = "1092-8081",

publisher = "IEEE",

note = "Proceedings of the 1998 11th Annual Meeting IEEE Lasers and Electro-Optics Society, LEOS. Part 2 (of 2) ; Conference date: 01-12-1998 Through 04-12-1998",

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TY - JOUR

T1 - Three band-gap QW intermixing in InP/InGaAs/InGaAsP system for monolithically integrated optical switch

AU - Qian, Y. H.

AU - Owen, M.

AU - Ke, M. L.

AU - Qiu, B. C.

AU - McDougall, S. D.

AU - Kowalski, O. P.

AU - Hamilton, C. J.

AU - Bryce, A. C.

AU - Marsh, J. H.

AU - Wilkinson, C. D.W.

AU - Penty, R. V.

AU - White, I. H.

AU - Perrin, S.

AU - Rogers, D.

AU - Robertson, M.

PY - 1998/12/1

Y1 - 1998/12/1

N2 - Quantum well intermixing is a key technique for photonic integration. The intermixing of InP/InGaAs/InGaAsP material involving the deposition of a layer of sputtered SiO 2 on the semiconductor surface, followed by thermal annealing has allowed good control of the intermixing process and has been used to fabricate extended cavity lasers. This will be used for optimization of the performance of optical switches consisting of passive components, modulators and amplifiers.

AB - Quantum well intermixing is a key technique for photonic integration. The intermixing of InP/InGaAs/InGaAsP material involving the deposition of a layer of sputtered SiO 2 on the semiconductor surface, followed by thermal annealing has allowed good control of the intermixing process and has been used to fabricate extended cavity lasers. This will be used for optimization of the performance of optical switches consisting of passive components, modulators and amplifiers.

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M3 - Conference article

AN - SCOPUS:0032304339

SN - 1092-8081

VL - 2

SP - 194

EP - 195

JO - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

JF - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

T2 - Proceedings of the 1998 11th Annual Meeting IEEE Lasers and Electro-Optics Society, LEOS. Part 2 (of 2)

Y2 - 1 December 1998 through 4 December 1998

ER -

Three band-gap QW intermixing in InP/InGaAs/InGaAsP system for monolithically integrated optical switch

Abstract

ASJC Scopus subject areas

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