Three band-gap QW intermixing in InP/InGaAs/InGaAsP system for monolithically integrated optical switch

Y. H. Qian, M. Owen, M. L. Ke, B. C. Qiu, S. D. McDougall, O. P. Kowalski, C. J. Hamilton, A. C. Bryce, J. H. Marsh, C. D.W. Wilkinson, R. V. Penty, I. H. White, S. Perrin, D. Rogers, M. Robertson

Research output: Contribution to journalConference article

6 Citations (Scopus)

Abstract

Quantum well intermixing is a key technique for photonic integration. The intermixing of InP/InGaAs/InGaAsP material involving the deposition of a layer of sputtered SiO 2 on the semiconductor surface, followed by thermal annealing has allowed good control of the intermixing process and has been used to fabricate extended cavity lasers. This will be used for optimization of the performance of optical switches consisting of passive components, modulators and amplifiers.

Original languageEnglish
Pages (from-to)194-195
Number of pages2
JournalConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume2
Publication statusPublished - 1 Dec 1998
EventProceedings of the 1998 11th Annual Meeting IEEE Lasers and Electro-Optics Society, LEOS. Part 2 (of 2) - Orlando, FL, USA
Duration: 1 Dec 19984 Dec 1998

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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