Three band-gap QW intermixing in InP/InGaAs/InGaAsP system for monolithically integrated optical switch

Y. H. Qian, M. Owen, M. L. Ke, B. C. Qiu, S. D. McDougall, O. P. Kowalski, C. J. Hamilton, A. C. Bryce, J. H. Marsh, C. D.W. Wilkinson, R. V. Penty, I. H. White, S. Perrin, D. Rogers, M. Robertson

Research output: Contribution to journalConference article

6 Citations (Scopus)

Abstract

Quantum well intermixing is a key technique for photonic integration. The intermixing of InP/InGaAs/InGaAsP material involving the deposition of a layer of sputtered SiO 2 on the semiconductor surface, followed by thermal annealing has allowed good control of the intermixing process and has been used to fabricate extended cavity lasers. This will be used for optimization of the performance of optical switches consisting of passive components, modulators and amplifiers.

Original languageEnglish
Pages (from-to)194-195
Number of pages2
JournalConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume2
Publication statusPublished - 1 Dec 1998
EventProceedings of the 1998 11th Annual Meeting IEEE Lasers and Electro-Optics Society, LEOS. Part 2 (of 2) - Orlando, FL, USA
Duration: 1 Dec 19984 Dec 1998

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Three band-gap QW intermixing in InP/InGaAs/InGaAsP system for monolithically integrated optical switch. / Qian, Y. H.; Owen, M.; Ke, M. L.; Qiu, B. C.; McDougall, S. D.; Kowalski, O. P.; Hamilton, C. J.; Bryce, A. C.; Marsh, J. H.; Wilkinson, C. D.W.; Penty, R. V.; White, I. H.; Perrin, S.; Rogers, D.; Robertson, M.

In: Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, Vol. 2, 01.12.1998, p. 194-195.

Research output: Contribution to journalConference article

Qian, YH, Owen, M, Ke, ML, Qiu, BC, McDougall, SD, Kowalski, OP, Hamilton, CJ, Bryce, AC, Marsh, JH, Wilkinson, CDW, Penty, RV, White, IH, Perrin, S, Rogers, D & Robertson, M 1998, 'Three band-gap QW intermixing in InP/InGaAs/InGaAsP system for monolithically integrated optical switch', Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, vol. 2, pp. 194-195.
Qian, Y. H. ; Owen, M. ; Ke, M. L. ; Qiu, B. C. ; McDougall, S. D. ; Kowalski, O. P. ; Hamilton, C. J. ; Bryce, A. C. ; Marsh, J. H. ; Wilkinson, C. D.W. ; Penty, R. V. ; White, I. H. ; Perrin, S. ; Rogers, D. ; Robertson, M. / Three band-gap QW intermixing in InP/InGaAs/InGaAsP system for monolithically integrated optical switch. In: Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. 1998 ; Vol. 2. pp. 194-195.
@article{4f9f4ae74e374be9a5946197d0fd7634,
title = "Three band-gap QW intermixing in InP/InGaAs/InGaAsP system for monolithically integrated optical switch",
abstract = "Quantum well intermixing is a key technique for photonic integration. The intermixing of InP/InGaAs/InGaAsP material involving the deposition of a layer of sputtered SiO 2 on the semiconductor surface, followed by thermal annealing has allowed good control of the intermixing process and has been used to fabricate extended cavity lasers. This will be used for optimization of the performance of optical switches consisting of passive components, modulators and amplifiers.",
author = "Qian, {Y. H.} and M. Owen and Ke, {M. L.} and Qiu, {B. C.} and McDougall, {S. D.} and Kowalski, {O. P.} and Hamilton, {C. J.} and Bryce, {A. C.} and Marsh, {J. H.} and Wilkinson, {C. D.W.} and Penty, {R. V.} and White, {I. H.} and S. Perrin and D. Rogers and M. Robertson",
year = "1998",
month = "12",
day = "1",
language = "English",
volume = "2",
pages = "194--195",
journal = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS",
issn = "1092-8081",
publisher = "IEEE",

}

TY - JOUR

T1 - Three band-gap QW intermixing in InP/InGaAs/InGaAsP system for monolithically integrated optical switch

AU - Qian, Y. H.

AU - Owen, M.

AU - Ke, M. L.

AU - Qiu, B. C.

AU - McDougall, S. D.

AU - Kowalski, O. P.

AU - Hamilton, C. J.

AU - Bryce, A. C.

AU - Marsh, J. H.

AU - Wilkinson, C. D.W.

AU - Penty, R. V.

AU - White, I. H.

AU - Perrin, S.

AU - Rogers, D.

AU - Robertson, M.

PY - 1998/12/1

Y1 - 1998/12/1

N2 - Quantum well intermixing is a key technique for photonic integration. The intermixing of InP/InGaAs/InGaAsP material involving the deposition of a layer of sputtered SiO 2 on the semiconductor surface, followed by thermal annealing has allowed good control of the intermixing process and has been used to fabricate extended cavity lasers. This will be used for optimization of the performance of optical switches consisting of passive components, modulators and amplifiers.

AB - Quantum well intermixing is a key technique for photonic integration. The intermixing of InP/InGaAs/InGaAsP material involving the deposition of a layer of sputtered SiO 2 on the semiconductor surface, followed by thermal annealing has allowed good control of the intermixing process and has been used to fabricate extended cavity lasers. This will be used for optimization of the performance of optical switches consisting of passive components, modulators and amplifiers.

UR - http://www.scopus.com/inward/record.url?scp=0032304339&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0032304339

VL - 2

SP - 194

EP - 195

JO - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

JF - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

SN - 1092-8081

ER -