Abstract
A traveling-wave, extended interaction amplifier is herein investigated for use in millimeter-wave and terahertz amplification sources. By placing engineered extended interaction cavities between the traveling wave structures, higher gain is obtained with a shorter high frequency circuit, compared with conventional traveling wave tubes architectures. The bandwidth of the device is significantly increased relative to extended interaction klystrons. A D-band beam wave interaction circuit of 26 mm long has been designed. Particle-in-cell simulations at 21.5-kV operating voltage, 0.3-A beam current, and 5-mW input power show that the maximum output power reaches 351 W, with a gain of 48.4 dB and 3-dB bandwidth of 1.42 GHz.
| Original language | English |
|---|---|
| Pages (from-to) | 1487-1491 |
| Number of pages | 5 |
| Journal | Chinese Journal of Electronics |
| Volume | 33 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 11 Nov 2024 |
Keywords
- D-band
- Extended interaction klystron
- Traveling wave tube
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Applied Mathematics
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