Theoretical Research on a D-Band Traveling Wave Extended Interaction Amplifier

Zhongtao Cui, Xuesong Yuan, Xiaotao Xu, Dongrui Chen, Yifan Zu, Matthew Thomas Cole, Qingyun Chen, Yang Yan

Research output: Contribution to journalArticlepeer-review

Abstract

A traveling-wave, extended interaction amplifier is herein investigated for use in millimeter-wave and terahertz amplification sources. By placing engineered extended interaction cavities between the traveling wave structures, higher gain is obtained with a shorter high frequency circuit, compared with conventional traveling wave tubes architectures. The bandwidth of the device is significantly increased relative to extended interaction klystrons. A D-band beam wave interaction circuit of 26 mm long has been designed. Particle-in-cell simulations at 21.5-kV operating voltage, 0.3-A beam current, and 5-mW input power show that the maximum output power reaches 351 W, with a gain of 48.4 dB and 3-dB bandwidth of 1.42 GHz.

Original languageEnglish
Pages (from-to)1487-1491
Number of pages5
JournalChinese Journal of Electronics
Volume33
Issue number6
DOIs
Publication statusPublished - 11 Nov 2024

Keywords

  • D-band
  • Extended interaction klystron
  • Traveling wave tube

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Applied Mathematics

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