Theoretical model for dicke superradiance in a semiconductor laser device

Xuhan Guo, Kevin A. Williams, Vojtech Olle, Adrian Wonfor, Richard V. Penty, Ian H. White

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

A theoretical model for Dicke superradiance (SR) in diode lasers is proposed using the travelling wave method with a spatially resolved absorber and spectrally resolved gain. The role of electrode configuration and optical bandwidth are compared and contrasted as a route to enhance femtosecond pulse power. While pulse duration can be significantly reduced through careful absorber length specification, stability is degraded. However an increased spectral gain bandwidth of up to 150 nm is predicted to allow pulsewidth reductions of down to 10 fs and over 500-W peak power without further degradation in pulse stability.

Original languageEnglish
Article number6035958
Pages (from-to)1817-1819
Number of pages3
JournalIEEE Photonics Technology Letters
Volume23
Issue number23
DOIs
Publication statusPublished - 1 Dec 2011

Keywords

  • Semiconductor device modeling
  • short pulse generation
  • spontaneous emission

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

Theoretical model for dicke superradiance in a semiconductor laser device. / Guo, Xuhan; Williams, Kevin A.; Olle, Vojtech; Wonfor, Adrian; Penty, Richard V.; White, Ian H.

In: IEEE Photonics Technology Letters, Vol. 23, No. 23, 6035958, 01.12.2011, p. 1817-1819.

Research output: Contribution to journalArticle

Guo, Xuhan ; Williams, Kevin A. ; Olle, Vojtech ; Wonfor, Adrian ; Penty, Richard V. ; White, Ian H. / Theoretical model for dicke superradiance in a semiconductor laser device. In: IEEE Photonics Technology Letters. 2011 ; Vol. 23, No. 23. pp. 1817-1819.
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