Theoretical model for dicke superradiance in a semiconductor laser device

Xuhan Guo; Kevin A. Williams; Vojtech Olle; Adrian Wonfor; Richard V. Penty; Ian H. White

doi:10.1109/LPT.2011.2169661

Theoretical model for dicke superradiance in a semiconductor laser device

Xuhan Guo, Kevin A. Williams, Vojtech Olle, Adrian Wonfor, Richard V. Penty, Ian H. White

Vice Chancellor's Office

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4 Citations (SciVal)

Abstract

A theoretical model for Dicke superradiance (SR) in diode lasers is proposed using the travelling wave method with a spatially resolved absorber and spectrally resolved gain. The role of electrode configuration and optical bandwidth are compared and contrasted as a route to enhance femtosecond pulse power. While pulse duration can be significantly reduced through careful absorber length specification, stability is degraded. However an increased spectral gain bandwidth of up to 150 nm is predicted to allow pulsewidth reductions of down to 10 fs and over 500-W peak power without further degradation in pulse stability.

Original language	English
Article number	6035958
Pages (from-to)	1817-1819
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	23
Issue number	23
DOIs	https://doi.org/10.1109/LPT.2011.2169661
Publication status	Published - 1 Dec 2011

Keywords

Semiconductor device modeling
short pulse generation
spontaneous emission

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/LPT.2011.2169661

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abstract = "A theoretical model for Dicke superradiance (SR) in diode lasers is proposed using the travelling wave method with a spatially resolved absorber and spectrally resolved gain. The role of electrode configuration and optical bandwidth are compared and contrasted as a route to enhance femtosecond pulse power. While pulse duration can be significantly reduced through careful absorber length specification, stability is degraded. However an increased spectral gain bandwidth of up to 150 nm is predicted to allow pulsewidth reductions of down to 10 fs and over 500-W peak power without further degradation in pulse stability.",

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AU - Guo, Xuhan

AU - Williams, Kevin A.

AU - Olle, Vojtech

AU - Wonfor, Adrian

AU - Penty, Richard V.

AU - White, Ian H.

PY - 2011/12/1

Y1 - 2011/12/1

N2 - A theoretical model for Dicke superradiance (SR) in diode lasers is proposed using the travelling wave method with a spatially resolved absorber and spectrally resolved gain. The role of electrode configuration and optical bandwidth are compared and contrasted as a route to enhance femtosecond pulse power. While pulse duration can be significantly reduced through careful absorber length specification, stability is degraded. However an increased spectral gain bandwidth of up to 150 nm is predicted to allow pulsewidth reductions of down to 10 fs and over 500-W peak power without further degradation in pulse stability.

AB - A theoretical model for Dicke superradiance (SR) in diode lasers is proposed using the travelling wave method with a spatially resolved absorber and spectrally resolved gain. The role of electrode configuration and optical bandwidth are compared and contrasted as a route to enhance femtosecond pulse power. While pulse duration can be significantly reduced through careful absorber length specification, stability is degraded. However an increased spectral gain bandwidth of up to 150 nm is predicted to allow pulsewidth reductions of down to 10 fs and over 500-W peak power without further degradation in pulse stability.

KW - Semiconductor device modeling

KW - short pulse generation

KW - spontaneous emission

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JF - IEEE Photonics Technology Letters

IS - 23

M1 - 6035958

ER -

Theoretical model for dicke superradiance in a semiconductor laser device

Abstract

Keywords

ASJC Scopus subject areas

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