The study of lattice damage using slow positrons following low energy B+ implantation of silicon

R M Gwilliam, A P Knights, A Nejim, B J Sealy, C P Burrows, F Malik, P G Coleman

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Original language	English
Pages (from-to)	62-67
Number of pages	6
Journal	Nuclear Instruments & Methods in Physics Research Section B - Beam Interactions with Materials and Atoms
Volume	175
Publication status	Published - 2001

ID number: ISI:000169389100012

Cite this

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title = "The study of lattice damage using slow positrons following low energy B+ implantation of silicon",

author = "Gwilliam, {R M} and Knights, {A P} and A Nejim and Sealy, {B J} and Burrows, {C P} and F Malik and Coleman, {P G}",

note = "ID number: ISI:000169389100012",

year = "2001",

language = "English",

volume = "175",

pages = "62--67",

journal = "Nuclear Instruments & Methods in Physics Research Section B - Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier",

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TY - JOUR

T1 - The study of lattice damage using slow positrons following low energy B+ implantation of silicon

AU - Gwilliam, R M

AU - Knights, A P

AU - Nejim, A

AU - Sealy, B J

AU - Burrows, C P

AU - Malik, F

AU - Coleman, P G

N1 - ID number: ISI:000169389100012

PY - 2001

Y1 - 2001

M3 - Article

SN - 0168-583X

VL - 175

SP - 62

EP - 67

JO - Nuclear Instruments & Methods in Physics Research Section B - Beam Interactions with Materials and Atoms

JF - Nuclear Instruments & Methods in Physics Research Section B - Beam Interactions with Materials and Atoms

ER -