The role of vacancies in the red luminescence from Mg-doped GaN

S Zeng, G N Aliev, Daniel Wolverson, James Davies, S J Bingham, D A Abdulmalik, Paul Coleman, T Wang, P J Parbrook

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Abstract

The red (1.8 eV) photoluminescence (PL) band often observed in Mg-doped GaN has been suggested to be due to a recombination process involving vacancy-related deep defects. To identify the defects concerned, optically-detected magnetic resonance (ODMR) and positron annihilation spectroscopy (PAS) experiments have been combined. A correlation between the PL spectra, the ODMR signals and the PAS data has been observed in as-grown layers as the magnesium doping level is increased. The experiments provide strong evidence that the origin of the red PL is recombination of electrons from both shallow and deep donors with holes at deep acceptors, the deep donors being complexes formed from nitrogen vacancies associated with substitutional magnesium ions and the deep acceptors being gallium vacancies or related centers
Original languageEnglish
Pages (from-to)1919-1922
Number of pages4
JournalPhysica Status Solidi (C)
Volume3
Issue number6
DOIs
Publication statusPublished - Jun 2006

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    Zeng, S., Aliev, G. N., Wolverson, D., Davies, J., Bingham, S. J., Abdulmalik, D. A., Coleman, P., Wang, T., & Parbrook, P. J. (2006). The role of vacancies in the red luminescence from Mg-doped GaN. Physica Status Solidi (C), 3(6), 1919-1922. https://doi.org/10.1002/pssc.200565331