@article{fa2752c6939e40be8a57c62ea3dc4a26,
title = "The response of open-volume defects in Si0.92Ge0.08 to annealing in nitrogen or oxygen ambient",
author = "Abdulmalik, \{D A\} and Coleman, \{P G\} and Su, \{H Z\} and Haddara, \{Y M\} and Knights, \{A P\}",
note = "ID number: ISI:000246175200014",
year = "2007",
language = "English",
volume = "18",
pages = "753--757",
journal = "Journal of Materials Science : Materials in Electronics",
issn = "0957-4522",
publisher = "Springer New York",
number = "7",
}