The response of open-volume defects in Si0.92Ge0.08 to annealing in nitrogen or oxygen ambient

D A Abdulmalik, P G Coleman, H Z Su, Y M Haddara, A P Knights

Research output: Contribution to journalArticlepeer-review

3 Citations (SciVal)
Original languageEnglish
Pages (from-to)753-757
Number of pages5
JournalJournal of Materials Science-Materials in Electronics
Issue number7
Publication statusPublished - 2007

Bibliographical note

ID number: ISI:000246175200014

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