The response of open-volume defects in Si0.92Ge0.08 to annealing in nitrogen or oxygen ambient

D A Abdulmalik, P G Coleman, H Z Su, Y M Haddara, A P Knights

Research output: Contribution to journal › Article › peer-review

3 Citations (SciVal)

Original language	English
Pages (from-to)	753-757
Number of pages	5
Journal	Journal of Materials Science : Materials in Electronics
Volume	18
Issue number	7
Publication status	Published - 2007

ID number: ISI:000246175200014

Cite this

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title = "The response of open-volume defects in Si0.92Ge0.08 to annealing in nitrogen or oxygen ambient",

author = "Abdulmalik, {D A} and Coleman, {P G} and Su, {H Z} and Haddara, {Y M} and Knights, {A P}",

note = "ID number: ISI:000246175200014",

year = "2007",

language = "English",

volume = "18",

pages = "753--757",

journal = "Journal of Materials Science : Materials in Electronics",

issn = "0957-4522",

publisher = "Springer New York",

number = "7",

}

TY - JOUR

T1 - The response of open-volume defects in Si0.92Ge0.08 to annealing in nitrogen or oxygen ambient

AU - Abdulmalik, D A

AU - Coleman, P G

AU - Su, H Z

AU - Haddara, Y M

AU - Knights, A P

N1 - ID number: ISI:000246175200014

PY - 2007

Y1 - 2007

M3 - Article

SN - 0957-4522

VL - 18

SP - 753

EP - 757

JO - Journal of Materials Science : Materials in Electronics

JF - Journal of Materials Science : Materials in Electronics

IS - 7

ER -