The reduction of threading dislocations in GaN using a GaN nanocolumn interlayer

L. Meshi, D. Cherns, I. Griffiths, S. Khongphetsak, A. Gott, Chaowang Liu, Somyod Denchitcharoen, Philip Shields, Wang N Wang, R. Campion, S. Novikov, T. Foxon

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10 Citations (SciVal)


Epitaxial lateral overgrowth (ELO) has been used to reduce threading dislocation (TD) densities in GaN. This paper reports transmission and scanning electron microscopy studies of TDs in GaN films grown by ELO on GaN nanocolumns produced either during growth by MBE (method 1), or by self-organised patterning on a uniform layer grown by MOCVD (method 2). In method 1, isolated nanocolumns grew without TDs, but some TDs formed when nanocolumns coalesced. Although some of these TDs extended through the overlayer, extensive lateral migration of others, depending on the dislocation type, led to dislocation annihilation, lowering the overall TD density. In method 2, a similar process of lateral migration of TDs was observed during ELO, resulting in a continuous GaN overlayer with TD densities less than 108 cm-2.
Original languageEnglish
Pages (from-to)1645-1647
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Issue number6
Early online date17 Apr 2008
Publication statusPublished - May 2008
Event7th International Conference of Nitride Semiconductors, ICNS-7, September 16, 2007 - September 21, 2007 - Las Vegas, NV, USA United States
Duration: 1 May 2008 → …


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