The reduction of threading dislocations in GaN using a GaN nanocolumn interlayer

L. Meshi, D. Cherns, I. Griffiths, S. Khongphetsak, A. Gott, Chaowang Liu, Somyod Denchitcharoen, Philip Shields, Wang N Wang, R. Campion, S. Novikov, T. Foxon

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Abstract

Epitaxial lateral overgrowth (ELO) has been used to reduce threading dislocation (TD) densities in GaN. This paper reports transmission and scanning electron microscopy studies of TDs in GaN films grown by ELO on GaN nanocolumns produced either during growth by MBE (method 1), or by self-organised patterning on a uniform layer grown by MOCVD (method 2). In method 1, isolated nanocolumns grew without TDs, but some TDs formed when nanocolumns coalesced. Although some of these TDs extended through the overlayer, extensive lateral migration of others, depending on the dislocation type, led to dislocation annihilation, lowering the overall TD density. In method 2, a similar process of lateral migration of TDs was observed during ELO, resulting in a continuous GaN overlayer with TD densities less than 108 cm-2.

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interlayers
metalorganic chemical vapor deposition
transmission electron microscopy
scanning electron microscopy

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Meshi, L., Cherns, D., Griffiths, I., Khongphetsak, S., Gott, A., Liu, C., ... Foxon, T. (2008). The reduction of threading dislocations in GaN using a GaN nanocolumn interlayer. DOI: 10.1002/pssc.200778562

The reduction of threading dislocations in GaN using a GaN nanocolumn interlayer. / Meshi, L.; Cherns, D.; Griffiths, I.; Khongphetsak, S.; Gott, A.; Liu, Chaowang; Denchitcharoen, Somyod; Shields, Philip; Wang, Wang N; Campion, R.; Novikov, S.; Foxon, T.

In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 5, No. 6, 05.2008, p. 1645-1647.

Research output: Contribution to journalArticle

Meshi, L, Cherns, D, Griffiths, I, Khongphetsak, S, Gott, A, Liu, C, Denchitcharoen, S, Shields, P, Wang, WN, Campion, R, Novikov, S & Foxon, T 2008, 'The reduction of threading dislocations in GaN using a GaN nanocolumn interlayer' Physica Status Solidi (C) Current Topics in Solid State Physics, vol. 5, no. 6, pp. 1645-1647. DOI: 10.1002/pssc.200778562
Meshi L, Cherns D, Griffiths I, Khongphetsak S, Gott A, Liu C et al. The reduction of threading dislocations in GaN using a GaN nanocolumn interlayer. Physica Status Solidi (C) Current Topics in Solid State Physics. 2008 May;5(6):1645-1647. Available from, DOI: 10.1002/pssc.200778562
Meshi, L. ; Cherns, D. ; Griffiths, I. ; Khongphetsak, S. ; Gott, A. ; Liu, Chaowang ; Denchitcharoen, Somyod ; Shields, Philip ; Wang, Wang N ; Campion, R. ; Novikov, S. ; Foxon, T./ The reduction of threading dislocations in GaN using a GaN nanocolumn interlayer. In: Physica Status Solidi (C) Current Topics in Solid State Physics. 2008 ; Vol. 5, No. 6. pp. 1645-1647
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abstract = "Epitaxial lateral overgrowth (ELO) has been used to reduce threading dislocation (TD) densities in GaN. This paper reports transmission and scanning electron microscopy studies of TDs in GaN films grown by ELO on GaN nanocolumns produced either during growth by MBE (method 1), or by self-organised patterning on a uniform layer grown by MOCVD (method 2). In method 1, isolated nanocolumns grew without TDs, but some TDs formed when nanocolumns coalesced. Although some of these TDs extended through the overlayer, extensive lateral migration of others, depending on the dislocation type, led to dislocation annihilation, lowering the overall TD density. In method 2, a similar process of lateral migration of TDs was observed during ELO, resulting in a continuous GaN overlayer with TD densities less than 108 cm-2.",
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AU - Liu,Chaowang

AU - Denchitcharoen,Somyod

AU - Shields,Philip

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AU - Novikov,S.

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