The reaction and materials chemistry of [Sn6(O)4 (OSiMe3)4]: Chemical vapour deposition of tin oxide

I. Barbul; A.L. Johnson; Gabriele Kociok-Kohn; K.C. Molloy; C. Silvestru; A.L. Sudlow

doi:10.1002/cplu.201300104

The reaction and materials chemistry of [Sn₆(O)₄ (OSiMe₃)₄]: Chemical vapour deposition of tin oxide

I. Barbul
, A.L. Johnson
, Gabriele Kociok-Kohn
, K.C. Molloy
, C. Silvestru
, A.L. Sudlow

Babeş-Bolyai University

Research output: Contribution to journal › Article › peer-review

26 Citations (SciVal)

Abstract

[Sn₆(O₄)(OSiMe₃)₄] and [{Sn(OSiMe₃)₂}₂] have been used to deposit SnO thin films by chemical vapour deposition. Films derived from [Sn₆(O)4(OSiMe₃)₄] comprise uniform cubes and are highly oriented, whereas those deposited from [{Sn(OSiMe₃)₂}₂] are made up of a continuous non-oriented layer with oriented cubes on the surface. The structure of a co-crystal, 2 Sn₆(O)₄(OSiMe₃)_4^-[Sn(OSiMe₃)₂]-4 THF, shows that [{Sn(OSiMe₃)₂}₂], a liquid at room temperature, adopts a μ-OSiMe₃-bridged dimeric structure. [Sn₆(O)₄(OSiMe₃₎₄] reacts with O₂ in a controlled manner to afford the novel oxo-cluster [Sn_{4 (}O)(OSiMe₃)₈], the structure of which is reported. In addition, a crystal of {[Sn₄(O)(OSiMe₃)₅]⁺₂[Sn(O)(OSiMe₃)₄ Cl]⁺₂}[Cl]^-₄ has been fortuitously isolated from the presence of SnCl₂ in the starting material for the preparation of [Sn₆(O)4(OSiMe₃)₄]_, and has been shown to incorporate two novel cationic oxo-tin clusters.

Original language	English
Pages (from-to)	866-874
Number of pages	9
Journal	ChemPlusChem
Volume	78
Issue number	8
Early online date	2 Jul 2013
DOIs	https://doi.org/10.1002/cplu.201300104
Publication status	Published - Aug 2013

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@article{04f91d7d050f4e8e9972f9049b40fec5,

title = "The reaction and materials chemistry of [Sn6(O)4 (OSiMe3)4]: Chemical vapour deposition of tin oxide",

abstract = "[Sn6(O4)(OSiMe3)4] and [\{Sn(OSiMe3)2\}2] have been used to deposit SnO thin films by chemical vapour deposition. Films derived from [Sn6(O)4(OSiMe3)4] comprise uniform cubes and are highly oriented, whereas those deposited from [\{Sn(OSiMe3)2\}2] are made up of a continuous non-oriented layer with oriented cubes on the surface. The structure of a co-crystal, 2 Sn6(O)4(OSiMe3)4-[Sn(OSiMe3)2]-4 THF, shows that [\{Sn(OSiMe3)2\}2], a liquid at room temperature, adopts a μ-OSiMe3-bridged dimeric structure. [Sn6(O)4(OSiMe3)4] reacts with O2 in a controlled manner to afford the novel oxo-cluster [Sn4 (O)(OSiMe3)8], the structure of which is reported. In addition, a crystal of \{[Sn4(O)(OSiMe3)5]+2[Sn(O)(OSiMe3)4 Cl]+2\}[Cl]-4 has been fortuitously isolated from the presence of SnCl2 in the starting material for the preparation of [Sn6(O)4(OSiMe3)4], and has been shown to incorporate two novel cationic oxo-tin clusters.",

author = "I. Barbul and A.L. Johnson and Gabriele Kociok-Kohn and K.C. Molloy and C. Silvestru and A.L. Sudlow",

year = "2013",

month = aug,

doi = "10.1002/cplu.201300104",

language = "English",

volume = "78",

pages = "866--874",

journal = "ChemPlusChem",

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publisher = "John Wiley and Sons Inc.",

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T1 - The reaction and materials chemistry of [Sn6(O)4 (OSiMe3)4]

T2 - Chemical vapour deposition of tin oxide

AU - Barbul, I.

AU - Johnson, A.L.

AU - Kociok-Kohn, Gabriele

AU - Molloy, K.C.

AU - Silvestru, C.

AU - Sudlow, A.L.

PY - 2013/8

Y1 - 2013/8

N2 - [Sn6(O4)(OSiMe3)4] and [{Sn(OSiMe3)2}2] have been used to deposit SnO thin films by chemical vapour deposition. Films derived from [Sn6(O)4(OSiMe3)4] comprise uniform cubes and are highly oriented, whereas those deposited from [{Sn(OSiMe3)2}2] are made up of a continuous non-oriented layer with oriented cubes on the surface. The structure of a co-crystal, 2 Sn6(O)4(OSiMe3)4-[Sn(OSiMe3)2]-4 THF, shows that [{Sn(OSiMe3)2}2], a liquid at room temperature, adopts a μ-OSiMe3-bridged dimeric structure. [Sn6(O)4(OSiMe3)4] reacts with O2 in a controlled manner to afford the novel oxo-cluster [Sn4 (O)(OSiMe3)8], the structure of which is reported. In addition, a crystal of {[Sn4(O)(OSiMe3)5]+2[Sn(O)(OSiMe3)4 Cl]+2}[Cl]-4 has been fortuitously isolated from the presence of SnCl2 in the starting material for the preparation of [Sn6(O)4(OSiMe3)4], and has been shown to incorporate two novel cationic oxo-tin clusters.

AB - [Sn6(O4)(OSiMe3)4] and [{Sn(OSiMe3)2}2] have been used to deposit SnO thin films by chemical vapour deposition. Films derived from [Sn6(O)4(OSiMe3)4] comprise uniform cubes and are highly oriented, whereas those deposited from [{Sn(OSiMe3)2}2] are made up of a continuous non-oriented layer with oriented cubes on the surface. The structure of a co-crystal, 2 Sn6(O)4(OSiMe3)4-[Sn(OSiMe3)2]-4 THF, shows that [{Sn(OSiMe3)2}2], a liquid at room temperature, adopts a μ-OSiMe3-bridged dimeric structure. [Sn6(O)4(OSiMe3)4] reacts with O2 in a controlled manner to afford the novel oxo-cluster [Sn4 (O)(OSiMe3)8], the structure of which is reported. In addition, a crystal of {[Sn4(O)(OSiMe3)5]+2[Sn(O)(OSiMe3)4 Cl]+2}[Cl]-4 has been fortuitously isolated from the presence of SnCl2 in the starting material for the preparation of [Sn6(O)4(OSiMe3)4], and has been shown to incorporate two novel cationic oxo-tin clusters.

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UR - http://dx.doi.org/10.1002/cplu.201300104

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JO - ChemPlusChem

JF - ChemPlusChem

IS - 8

ER -

The reaction and materials chemistry of [Sn₆(O)₄ (OSiMe₃)₄]: Chemical vapour deposition of tin oxide

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