The operational mechanism of ferroelectric-driven organic resistive switches

Martijn Kemerink, Kamal Asadi, Paul W.M. Blom, Dago M. De Leeuw

Research output: Contribution to journalArticlepeer-review

37 Citations (SciVal)


The availability of a reliable memory element is crucial for the fabrication of 'plastic' logic circuits. We use numerical simulations to show that the switching mechanism of ferroelectric-driven organic resistive switches is the stray field of the polarized ferroelectric phase. The stray field modulates the charge injection from a metallic electrode into the organic semiconductor, switching the diode from injection limited to space charge limited. The modeling rationalizes the previously observed exponential dependence of the on/off ratio on injection barrier height. We find a lower limit of about 50 nm for the feature size that can be used in a crossbar array, translating into a rewritable memory with an information density of the order of 1 Gb/cm2.

Original languageEnglish
Pages (from-to)147-152
Number of pages6
JournalOrganic Electronics
Issue number1
Publication statusPublished - Jan 2012


  • Charge transport
  • Data storage
  • Ferroelectric nanostructures
  • Organic semiconductors
  • Thin films

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering


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