The operational mechanism of ferroelectric-driven organic resistive switches

Martijn Kemerink; Kamal Asadi; Paul W.M. Blom; Dago M. De Leeuw

doi:10.1016/j.orgel.2011.10.013

The operational mechanism of ferroelectric-driven organic resistive switches

Martijn Kemerink, Kamal Asadi, Paul W.M. Blom, Dago M. De Leeuw

Department of Physics

Research output: Contribution to journal › Article › peer-review

37 Citations (SciVal)

Abstract

The availability of a reliable memory element is crucial for the fabrication of 'plastic' logic circuits. We use numerical simulations to show that the switching mechanism of ferroelectric-driven organic resistive switches is the stray field of the polarized ferroelectric phase. The stray field modulates the charge injection from a metallic electrode into the organic semiconductor, switching the diode from injection limited to space charge limited. The modeling rationalizes the previously observed exponential dependence of the on/off ratio on injection barrier height. We find a lower limit of about 50 nm for the feature size that can be used in a crossbar array, translating into a rewritable memory with an information density of the order of 1 Gb/cm².

Original language	English
Pages (from-to)	147-152
Number of pages	6
Journal	Organic Electronics
Volume	13
Issue number	1
DOIs	https://doi.org/10.1016/j.orgel.2011.10.013
Publication status	Published - Jan 2012

Keywords

Charge transport
Data storage
Ferroelectric nanostructures
Organic semiconductors
Thin films

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Biomaterials
General Chemistry
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/j.orgel.2011.10.013

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abstract = "The availability of a reliable memory element is crucial for the fabrication of 'plastic' logic circuits. We use numerical simulations to show that the switching mechanism of ferroelectric-driven organic resistive switches is the stray field of the polarized ferroelectric phase. The stray field modulates the charge injection from a metallic electrode into the organic semiconductor, switching the diode from injection limited to space charge limited. The modeling rationalizes the previously observed exponential dependence of the on/off ratio on injection barrier height. We find a lower limit of about 50 nm for the feature size that can be used in a crossbar array, translating into a rewritable memory with an information density of the order of 1 Gb/cm2.",

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AU - Asadi, Kamal

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AU - De Leeuw, Dago M.

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N2 - The availability of a reliable memory element is crucial for the fabrication of 'plastic' logic circuits. We use numerical simulations to show that the switching mechanism of ferroelectric-driven organic resistive switches is the stray field of the polarized ferroelectric phase. The stray field modulates the charge injection from a metallic electrode into the organic semiconductor, switching the diode from injection limited to space charge limited. The modeling rationalizes the previously observed exponential dependence of the on/off ratio on injection barrier height. We find a lower limit of about 50 nm for the feature size that can be used in a crossbar array, translating into a rewritable memory with an information density of the order of 1 Gb/cm2.

AB - The availability of a reliable memory element is crucial for the fabrication of 'plastic' logic circuits. We use numerical simulations to show that the switching mechanism of ferroelectric-driven organic resistive switches is the stray field of the polarized ferroelectric phase. The stray field modulates the charge injection from a metallic electrode into the organic semiconductor, switching the diode from injection limited to space charge limited. The modeling rationalizes the previously observed exponential dependence of the on/off ratio on injection barrier height. We find a lower limit of about 50 nm for the feature size that can be used in a crossbar array, translating into a rewritable memory with an information density of the order of 1 Gb/cm2.

KW - Charge transport

KW - Data storage

KW - Ferroelectric nanostructures

KW - Organic semiconductors

KW - Thin films

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The operational mechanism of ferroelectric-driven organic resistive switches

Abstract

Keywords

ASJC Scopus subject areas

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