The management of stress in MOCVD-grown InGaN/GaN LED multilayer structures on Si(1 1 1) substrates

Quanzhong Jiang, Duncan W E Allsopp, C R Bowen, Wang N Wang

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The tensile stress in light-emitting diode (LED)-on-Si(1 1 1) multilayer structures must be reduced so that it does not compromise the multiple quantum well emission wavelength uniformity and structural stability. In this paper it is shown for non-optimized LED structures grown on Si(1 1 1) substrates that both emission wavelength uniformity and structural stability can be achieved within the same growth process. In order to gain a deeper understanding of the stress distribution within such a structure, cross-sectional Raman and photo-luminescence spectroscopy techniques were developed. It is observed that for a Si:GaN layer grown on a low-temperature (LT) AlN intermediate layer there is a decrease in compressive stress with increasing Si:GaN layer thickness during MOCVD growth which leads to a high level of tensile stress in the upper part of the layer. This may lead to the development of cracks during cooling to room temperature. Such a phenomenon may be associated with annihilation of defects such as dislocations. Therefore, a reduction of dislocation intensity should take place at the early stage of GaN growth on an AlN or AlGaN layer in order to reduce a build up of tensile stress with thickness. Furthermore, it is also shown that a prolonged three dimensional GaN island growth on a LT AlN interlayer for the reduction of dislocations may result in a reduction in the compressive stress in the resulting GaN layer.
Original languageEnglish
Article number094010
JournalSemiconductor Science and Technology
Volume28
Issue number9
Early online date21 Aug 2013
DOIs
Publication statusPublished - Sep 2013

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Metallorganic chemical vapor deposition
laminates
metalorganic chemical vapor deposition
Light emitting diodes
Multilayers
light emitting diodes
Tensile stress
Substrates
tensile stress
Compressive stress
structural stability
Wavelength
Photoluminescence spectroscopy
Temperature
Semiconductor quantum wells
Stress concentration
Cooling
Cracks
wavelengths
Defects

Cite this

The management of stress in MOCVD-grown InGaN/GaN LED multilayer structures on Si(1 1 1) substrates. / Jiang, Quanzhong; Allsopp, Duncan W E; Bowen, C R; Wang, Wang N.

In: Semiconductor Science and Technology, Vol. 28, No. 9, 094010, 09.2013.

Research output: Contribution to journalArticle

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