The influence of substrate temperature on the evolution of ion implantation-induced defects in epitaxial 6H-SiC

W Anwand, G Brauer, H Wirth, W Skorupa, P G Coleman

Research output: Contribution to journal › Article › peer-review

10 Citations (SciVal)

ID number: ISI:000177499200026

Cite this

@article{f53c6051f7af43d78ac6b19affdae9ab,

title = "The influence of substrate temperature on the evolution of ion implantation-induced defects in epitaxial 6H-SiC",

author = "W Anwand and G Brauer and H Wirth and W Skorupa and Coleman, {P G}",

note = "ID number: ISI:000177499200026",

year = "2002",

language = "English",

volume = "194",

pages = "127--130",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier B.V.",

number = "1-4",

}

TY - JOUR

T1 - The influence of substrate temperature on the evolution of ion implantation-induced defects in epitaxial 6H-SiC

AU - Anwand, W

AU - Brauer, G

AU - Wirth, H

AU - Skorupa, W

AU - Coleman, P G

N1 - ID number: ISI:000177499200026

PY - 2002

Y1 - 2002

M3 - Article

SN - 0169-4332

VL - 194

SP - 127

EP - 130

JO - Applied Surface Science

JF - Applied Surface Science

IS - 1-4

ER -