The influence of substrate temperature on the evolution of ion implantation-induced defects in epitaxial 6H-SiC

W Anwand, G Brauer, H Wirth, W Skorupa, P G Coleman

Research output: Contribution to journalArticlepeer-review

10 Citations (SciVal)
Original languageEnglish
Pages (from-to)127-130
Number of pages4
JournalApplied Surface Science
Issue number1-4
Publication statusPublished - 2002

Bibliographical note

ID number: ISI:000177499200026

Cite this