The influence of substrate temperature on the evolution of ion implantation-induced defects in epitaxial 6H-SiC

W Anwand, G Brauer, H Wirth, W Skorupa, P G Coleman

Research output: Contribution to journalArticle

10 Citations (Scopus)
Original languageEnglish
Pages (from-to)127-130
Number of pages4
JournalApplied Surface Science
Volume194
Issue number1-4
Publication statusPublished - 2002

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