The impact of gross well width fluctuations on the efficiency of GaN-based light emitting diodes

R. A. Oliver; F. C. -P. Massabuau; M. J. Kappers; W. A. Phillips; E. J. Thrush; C. C. Tartan; W. E. Blenkhorn; T. J. Badcock; P. Dawson; M. A. Hopkins; D. W. E. Allsopp; C. J. Humphreys

doi:10.1063/1.4824193

The impact of gross well width fluctuations on the efficiency of GaN-based light emitting diodes

R. A. Oliver, F. C. -P. Massabuau, M. J. Kappers, W. A. Phillips, E. J. Thrush, C. C. Tartan, W. E. Blenkhorn, T. J. Badcock, P. Dawson, M. A. Hopkins, D. W. E. Allsopp, C. J. Humphreys

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Abstract

Photoluminescence and electroluminescence measurements on InGaN/GaN quantum well (QW) structures and light emitting diodes suggest that QWs with gross fluctuations in width (formed when, during growth, the InGaN is exposed unprotected to high temperatures) give higher room temperature quantum efficiencies than continuous QWs. The efficiency does not depend on the growth temperature of the GaN barriers. Temperature-dependent electroluminescence measurements suggest that the higher efficiency results from higher activation energies for defect-related non-radiative recombination in QW samples with gaps. At high currents the maximum quantum efficiency is similar for all samples, indicating the droop term is not dependent on QW morphology.

Original language	English
Article number	141114
Journal	Applied Physics Letters
Volume	103
Issue number	14
Early online date	3 Oct 2013
DOIs	https://doi.org/10.1063/1.4824193
Publication status	Published - 2013

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Oliver, R. A., Massabuau, F. C. .-P., Kappers, M. J., Phillips, W. A., Thrush, E. J., Tartan, C. C., Blenkhorn, W. E., Badcock, T. J., Dawson, P., Hopkins, M. A., Allsopp, D. W. E., & Humphreys, C. J. (2013). The impact of gross well width fluctuations on the efficiency of GaN-based light emitting diodes. Applied Physics Letters, 103(14), Article 141114. https://doi.org/10.1063/1.4824193

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title = "The impact of gross well width fluctuations on the efficiency of GaN-based light emitting diodes",

abstract = "Photoluminescence and electroluminescence measurements on InGaN/GaN quantum well (QW) structures and light emitting diodes suggest that QWs with gross fluctuations in width (formed when, during growth, the InGaN is exposed unprotected to high temperatures) give higher room temperature quantum efficiencies than continuous QWs. The efficiency does not depend on the growth temperature of the GaN barriers. Temperature-dependent electroluminescence measurements suggest that the higher efficiency results from higher activation energies for defect-related non-radiative recombination in QW samples with gaps. At high currents the maximum quantum efficiency is similar for all samples, indicating the droop term is not dependent on QW morphology.",

author = "Oliver, {R. A.} and Massabuau, {F. C. -P.} and Kappers, {M. J.} and Phillips, {W. A.} and Thrush, {E. J.} and Tartan, {C. C.} and Blenkhorn, {W. E.} and Badcock, {T. J.} and P. Dawson and Hopkins, {M. A.} and Allsopp, {D. W. E.} and Humphreys, {C. J.}",

year = "2013",

doi = "10.1063/1.4824193",

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T1 - The impact of gross well width fluctuations on the efficiency of GaN-based light emitting diodes

AU - Oliver, R. A.

AU - Massabuau, F. C. -P.

AU - Kappers, M. J.

AU - Phillips, W. A.

AU - Thrush, E. J.

AU - Tartan, C. C.

AU - Blenkhorn, W. E.

AU - Badcock, T. J.

AU - Dawson, P.

AU - Hopkins, M. A.

AU - Allsopp, D. W. E.

AU - Humphreys, C. J.

PY - 2013

Y1 - 2013

N2 - Photoluminescence and electroluminescence measurements on InGaN/GaN quantum well (QW) structures and light emitting diodes suggest that QWs with gross fluctuations in width (formed when, during growth, the InGaN is exposed unprotected to high temperatures) give higher room temperature quantum efficiencies than continuous QWs. The efficiency does not depend on the growth temperature of the GaN barriers. Temperature-dependent electroluminescence measurements suggest that the higher efficiency results from higher activation energies for defect-related non-radiative recombination in QW samples with gaps. At high currents the maximum quantum efficiency is similar for all samples, indicating the droop term is not dependent on QW morphology.

AB - Photoluminescence and electroluminescence measurements on InGaN/GaN quantum well (QW) structures and light emitting diodes suggest that QWs with gross fluctuations in width (formed when, during growth, the InGaN is exposed unprotected to high temperatures) give higher room temperature quantum efficiencies than continuous QWs. The efficiency does not depend on the growth temperature of the GaN barriers. Temperature-dependent electroluminescence measurements suggest that the higher efficiency results from higher activation energies for defect-related non-radiative recombination in QW samples with gaps. At high currents the maximum quantum efficiency is similar for all samples, indicating the droop term is not dependent on QW morphology.

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DO - 10.1063/1.4824193

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JO - Applied Physics Letters

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ER -

The impact of gross well width fluctuations on the efficiency of GaN-based light emitting diodes

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