The impact of gross well width fluctuations on the efficiency of GaN-based light emitting diodes

R. A. Oliver, F. C. -P. Massabuau, M. J. Kappers, W. A. Phillips, E. J. Thrush, C. C. Tartan, W. E. Blenkhorn, T. J. Badcock, P. Dawson, M. A. Hopkins, D. W. E. Allsopp, C. J. Humphreys

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Abstract

Photoluminescence and electroluminescence measurements on InGaN/GaN quantum well (QW) structures and light emitting diodes suggest that QWs with gross fluctuations in width (formed when, during growth, the InGaN is exposed unprotected to high temperatures) give higher room temperature quantum efficiencies than continuous QWs. The efficiency does not depend on the growth temperature of the GaN barriers. Temperature-dependent electroluminescence measurements suggest that the higher efficiency results from higher activation energies for defect-related non-radiative recombination in QW samples with gaps. At high currents the maximum quantum efficiency is similar for all samples, indicating the droop term is not dependent on QW morphology.
Original languageEnglish
Article number141114
JournalApplied Physics Letters
Volume103
Issue number14
Early online date3 Oct 2013
DOIs
Publication statusPublished - 2013

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